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2N5657G

Onsemi

2N5657G by Onsemi

The Onsemi 2N5657G is a NPN power BJT with max. collector-emitter voltage of 350V and max. collector current of 0.5A, ideal for switching applications with a max. power dissipation of 20W. Its single configuration and through-hole terminal form make it suitable for various electronic circuits requiring high-speed operation up to 10MHz transition frequency.

Median Price

$0.408

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 19,919 parts In-Stock

1+ parts

$0.280

100+ parts

$0.270

1k+ parts

$0.270

10k+ parts

-

19,919

$0.280

$0.270

$0.270

-

Arrow

USA . 2 parts In-Stock

1+ parts

$0.283

100+ parts

$0.268

1k+ parts

-

10k+ parts

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2

$0.283

$0.268

-

-

Farnell

UK . 583 parts In-Stock

1+ parts

$0.534

100+ parts

$0.221

1k+ parts

-

10k+ parts

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583

$0.534

$0.221

-

-

Element14

Singapore . 583 parts In-Stock

1+ parts

$0.922

100+ parts

$0.460

1k+ parts

$0.355

10k+ parts

$0.303

583

$0.922

$0.460

$0.355

$0.303

Avnet

USA . 1,768 parts In-Stock

1+ parts

-

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-

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1,768

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Chip1Stop

Japan . 21 parts In-Stock

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21

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Distributors (In-Stock)

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Digiode

USA . 285 parts In-Stock

1+ parts

$0.211

100+ parts

-

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-

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285

$0.211

-

-

-

Chip Stock

USA . 58,000 parts In-Stock

1+ parts

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58,000

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Vyrian

USA . 4,880 parts In-Stock

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4,880

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Flip Electronics

USA . 500 parts In-Stock

1+ parts

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500

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EMSNET

USA . 449 parts In-Stock

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449

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Distributors (Availability)

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Ampacity Inc.

Singapore . 736 parts In-Stock

1+ parts

$0.189

100+ parts

-

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736

$0.189

-

-

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Corphita

USA . 466 parts In-Stock

1+ parts

$0.200

100+ parts

-

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466

$0.200

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Corohmni

South Africa . 224 parts In-Stock

1+ parts

$0.222

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224

$0.222

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AZTECH Wire

Italy . 319 parts In-Stock

1+ parts

$20.570

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-

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319

$20.570

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SupplyDigital Components

Austria . 6,254 parts In-Stock

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6,254

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Continental Prestige Electronics

USA . 6,182 parts In-Stock

1+ parts

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$0.247

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6,182

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$0.247

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Kulean Microsystems

USA . 5,235 parts In-Stock

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5,235

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Perfect Parts

USA . 4,540 parts In-Stock

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4,540

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Problanco Electronics

Mexico . 3,284 parts In-Stock

1+ parts

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3,284

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TANS Electronics

Latvia . 2,580 parts In-Stock

1+ parts

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2,580

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Native Components

USA . 881 parts In-Stock

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881

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Northwest PG Solutions

USA . 374 parts In-Stock

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374

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UHIMA Technologies

Türkiye . 235 parts In-Stock

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235

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Overview

Unlock the power of innovation with the 2N5657G by Onsemi. Manufactured with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum power dissipation of 20W and a collector-emitter voltage of 350V, this NPN transistor provides reliability and efficiency. Whether you're designing industrial control systems or automotive electronics, the 2N5657G delivers exceptional value and functionality. Trust Onsemi for superior quality and cutting-edge technology. Elevate your projects with the 2N5657G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and ensures durability of the transistor.

Polarity or Channel Type: NPN

Commonly used in switching applications, providing reliable performance.

Configuration: SINGLE

Simplified design with only one configuration to consider, making it easier to use.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient operation in such scenarios.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Package Shape: RECTANGULAR

Compact and space-saving design, allowing for easy integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections, ensuring reliable performance in different environments.

Maximum Collector-Emitter Voltage: 350 V

Can withstand high voltage levels, making it suitable for a wide range of voltage applications.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels, making it suitable for various electronic circuits.

Nominal Transition Frequency (fT): 10 MHz

High transition frequency allows for faster switching speeds, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5657G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5657G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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