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2N5683

Texas Instruments

2N5683 by Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A;

Median Price

$15.835

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Freelance Electronics

USA . 41 parts In-Stock

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$5.004

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$5.254

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$4.954

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DigiKey Marketplace

USA . 409 parts In-Stock

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$11.040

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$9.160

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American Microsemiconductor Inc.

USA . 256 parts In-Stock

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$20.630

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TEDSS.com

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$25.000

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Vyrian

USA . 3,688 parts In-Stock

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Digiode

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Electro Mavin

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Elcom Components

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ECAB

Sweden . 6 parts In-Stock

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R&J Components

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Prism Electronics

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Electronics Depot

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Atlantic Semiconductor

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Parana Technologies

USA . 113 parts In-Stock

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$0.777

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$1.769

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DigiPath Technology Company

USA . 701 parts In-Stock

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$0.856

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$0.787

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701

$0.856

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ChromeModa Solutions

Germany . 1,916 parts In-Stock

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$0.873

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$0.716

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IDEA Electronic Components Group

UK . 1,315 parts In-Stock

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Native Components

USA . 961 parts In-Stock

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$2.045

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Northwest PG Solutions

USA . 1,676 parts In-Stock

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AZTECH Wire

Italy . 261 parts In-Stock

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One Stop Electronics

USA . 946 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,329 parts In-Stock

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West Coast Incorporated

USA . 8,334 parts In-Stock

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Microchip USA

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Glotronic Ltd.

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Corphita

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Supply Digital

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Assy Fe

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Perfect Parts

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5683 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5683 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-502-5856, 5961005025856, 5961-01-083-5270, 5961010835270, 5961-99-118-5144, 5961991185144, 5961-14-316-7872, 5961143167872

NIIN

005025856, 010835270, 991185144, 143167872

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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