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2N5686

Texas Instruments

2N5686 by Texas Instruments

2N5686 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 300W, max. collector current of 50A, and max. operating temp. of 200°C. It is commonly used for switching applications due to its single configuration and round package shape with flange mount style.

Median Price

$20.750

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Element14

Singapore . 14 parts In-Stock

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$20.750

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$11.000

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$10.120

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14

$20.750

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Bristol Electronics

USA . 11 parts In-Stock

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Digiode

USA . 3,015 parts In-Stock

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DigiKey Marketplace

USA . 385 parts In-Stock

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$10.560

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$8.760

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DF Sales Co.

USA . 71 parts In-Stock

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$19.300

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DF Sales Co.

USA . 71 parts In-Stock

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American Microsemiconductor Inc.

USA . 720 parts In-Stock

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$31.980

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Vyrian

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PUI

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Fibra_Brandt Electronic GMBH

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Resion

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Electronics Depot

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SPM Sales

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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R&J Components

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Odi Ramu Company

Canada . 7 parts In-Stock

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Electronic Expediters

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MISTER SPROCKETS

USA . 6 parts In-Stock

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Huijzer Components

Netherlands . 5 parts In-Stock

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Mil-Aero Solutions, Inc.

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Native Components

USA . 384 parts In-Stock

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$0.261

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$0.250

384

$0.261

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$0.250

Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.440

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$0.400

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$0.361

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270

$0.440

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$0.361

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Parana Technologies

USA . 978 parts In-Stock

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$0.465

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$1.613

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978

$0.465

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$1.613

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DigiPath Technology Company

USA . 2,269 parts In-Stock

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$0.513

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$0.472

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2,269

$0.513

$0.472

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ChromeModa Solutions

Germany . 5,524 parts In-Stock

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$0.523

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$0.429

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IDEA Electronic Components Group

UK . 845 parts In-Stock

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$0.523

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$0.471

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845

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Corphita

USA . 3,904 parts In-Stock

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$9.756

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Corohmni

South Africa . 95 parts In-Stock

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Continental Prestige Electronics

USA . 7 parts In-Stock

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$16.770

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$5.590

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Microchip USA

USA . 8,522 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,038 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 6,442 parts In-Stock

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SupplyDigital Components

Austria . 5,117 parts In-Stock

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Kulean Microsystems

USA . 2,558 parts In-Stock

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Glotronic Ltd.

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Northwest PG Solutions

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TANS Electronics

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UHIMA Technologies

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West Coast Incorporated

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Supply Digital

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A-Plus Industry Inc.

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Perfect Parts

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RTC Component Inc.

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Overview

Discover the power and reliability of the 2N5686 by Texas Instruments, a top-quality Power BJT transistor designed for high-performance switching applications. With its sturdy metal package body and NPN configuration, this transistor offers unparalleled durability and efficiency. From industrial machinery to automotive electronics, the 2N5686 provides exceptional value and performance. Trust Texas Instruments, a renowned manufacturer in the industry, to deliver cutting-edge technology that meets your needs. Elevate your projects with the 2N5686 and experience the difference today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity and helps in dissipating heat effectively, improving the overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits due to their high efficiency and versatility in switching and amplification applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate the transistor into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high current handling capabilities, making it suitable for efficient power control.

Package Shape: ROUND

Round package shape allows for easy mounting and efficient use of space in compact electronic devices.

Terminal Form: PIN/PEG

Pin/peg terminal form provides a secure and reliable connection to external circuitry, ensuring proper functionality of the transistor in various applications.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows the transistor to handle heavy loads and operate under high power conditions without overheating or failing.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and installation, providing a stable and secure connection for the transistor in electronic assemblies.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain ensures reliable amplification of the input signal, making the transistor suitable for various amplification applications.

Maximum Operating Temperature: 200 °C

High maximum operating temperature enables the transistor to withstand extreme environmental conditions and ensures stable performance over a wide temperature range.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating allows the transistor to handle high voltage loads safely and reliably in switching applications.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and high breakdown voltage, making the transistor durable and reliable in various operating conditions.

Maximum Collector Current (IC): 50 A

High maximum collector current rating allows the transistor to handle heavy current loads efficiently, making it suitable for high-power applications.

Terminal Position: BOTTOM

Bottom terminal position provides easy access to the transistor terminals for connection to external circuitry, simplifying the installation and maintenance process.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and electrical isolation, enhancing the overall performance and reliability of the transistor.

Nominal Transition Frequency (fT): 2 MHz

High nominal transition frequency indicates fast response time and good high-frequency performance, making the transistor suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5686 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5686 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-333-8227, 5961003338227, 5961-00-506-6508, 5961005066508, 5961-00-138-7221, 5961001387221

NIIN

003338227, 005066508, 001387221

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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