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2N5684

Texas Instruments

2N5684 by Texas Instruments

2N5684 by Texas Instruments is a PNP power BJT with max. collector current of 50A and max. power dissipation of 300W. Ideal for switching applications, it operates at up to 200°C with a collector-emitter voltage of 80V.

Median Price

$18.510

Lifecycle Status

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30

In-Stock Inventory

1k+

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TEDSS.com

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Bristol Electronics

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DigiKey Marketplace

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American Microsemiconductor Inc.

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Electro Sonic

Canada . 1 parts In-Stock

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Digiode

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Resion

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Electronics Depot

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Northwest PG Solutions

USA . 1,206 parts In-Stock

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$0.767

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Parana Technologies

USA . 380 parts In-Stock

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$1.129

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$1.953

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DigiPath Technology Company

USA . 11 parts In-Stock

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$1.244

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$1.144

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ChromeModa Solutions

Germany . 6,304 parts In-Stock

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$1.269

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$1.041

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IDEA Electronic Components Group

UK . 1,483 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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AZTECH Wire

Italy . 263 parts In-Stock

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$7.487

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One Stop Electronics

USA . 1,023 parts In-Stock

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Microchip USA

USA . 9,741 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Native Components

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Perfect Parts

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UHIMA Technologies

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Metaverse IC Inc.

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A-Plus Industry Inc.

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Overview

Looking for a reliable and high-quality solution for your power switching applications? Look no further than the Texas Instruments 2N5684 Power Bipolar Junction Transistor. With a maximum power dissipation of 300W and a maximum collector current of 50A, this PNP transistor is perfect for handling heavy-duty tasks with ease. Trust in Texas Instruments' reputation for excellence and innovation to deliver the performance and reliability you need. Upgrade your power switching capabilities today with the 2N5684 and experience the benefits of superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: METAL

Metal body ensures better heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and this makes the product versatile for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the product easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

Round package shape allows for easy mounting and installation, providing flexibility in the design of the electronic system.

Terminal Form: PIN/PEG

Pin/peg terminals provide a secure connection, reducing the risk of disconnection and improving stability in the circuit.

Maximum Power Dissipation (Abs): 300 W

High maximum power dissipation rating allows the transistor to handle high power loads without overheating, ensuring reliability in operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting, making it suitable for industrial applications.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain of 5 ensures sufficient amplification of input signals, making the transistor suitable for amplification purposes.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to operate in harsh environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating provides safety margin in high voltage circuits, enhancing the overall reliability of the product.

Transistor Element Material: SILICON

Silicon transistor element material ensures high efficiency and reliability in various operating conditions.

Maximum Collector Current (IC): 50 A

High maximum collector current rating makes the transistor suitable for high current applications, ensuring effective power handling capability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and connection, enhancing the ease of integration into electronic systems.

Case Connection: COLLECTOR

Case connection at the collector allows for efficient heat dissipation, improving the overall reliability and performance of the transistor.

Nominal Transition Frequency (fT): 2 MHz

High nominal transition frequency ensures fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5684 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5684 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-450-3338, 5961004503338, 5961-99-661-2791, 5961996612791

NIIN

004503338, 996612791

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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