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2N5671

Texas Instruments

2N5671 by Texas Instruments

2N5671 by Texas Instruments is a NPN BJT transistor with 90V VCE, 30A IC, and 80W Ptot. Ideal for switching applications due to its high power dissipation and collector current capabilities. Suitable for use in various electronic devices requiring efficient switching operations.

Median Price

$58.894

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,291 parts In-Stock

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-

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$52.350

1k+ parts

$46.840

10k+ parts

$44.080

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$52.350

$46.840

$44.080

DigiKey

USA . 1,291 parts In-Stock

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Verical

USA . 1,291 parts In-Stock

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$65.438

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$58.550

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$55.100

1,291

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$65.438

$58.550

$55.100

Distributors (In-Stock)

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Freelance Electronics

USA . 2 parts In-Stock

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$3.152

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$3.152

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Digiode

USA . 5,056 parts In-Stock

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$55.394

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Vyrian

USA . 8,574 parts In-Stock

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$58.310

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DF Sales Co.

USA . 16 parts In-Stock

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$60.000

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$60.000

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DF Sales Co.

USA . 16 parts In-Stock

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$60.000

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TEDSS.com

USA . 17 parts In-Stock

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$95.000

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Anansix

USA . 1,422 parts In-Stock

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DigiKey Marketplace

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ES Components

USA . 105 parts In-Stock

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ECAB

Sweden . 61 parts In-Stock

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ABC Electronics Ltd.

UK . 32 parts In-Stock

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Sunrise Surplus Inc.

USA . 18 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 11 parts In-Stock

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Electronic Expediters

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LittleDiode

UK . 5 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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Resion

USA . 3 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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Distributors (Availability)

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ChromeModa Solutions

Germany . 3,307 parts In-Stock

1+ parts

$0.515

100+ parts

$0.422

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3,307

$0.515

$0.422

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Advanced Electronics

New Zealand . 95 parts In-Stock

1+ parts

$0.681

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$0.620

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$0.558

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95

$0.681

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$0.558

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Native Components

USA . 1,085 parts In-Stock

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$1.032

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$1.032

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Northwest PG Solutions

USA . 2,430 parts In-Stock

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$1.135

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$1.135

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IDEA Electronic Components Group

UK . 1,329 parts In-Stock

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$1.769

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$1.592

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$1.769

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DigiPath Technology Company

USA . 2,940 parts In-Stock

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$3.327

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MKK Technologies

India . 1,956 parts In-Stock

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$3.327

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Corohmni

South Africa . 519 parts In-Stock

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$7.451

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Corphita

USA . 6,157 parts In-Stock

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$52.479

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Component Stockers USA

USA . 1,195 parts In-Stock

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$59.100

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$55.560

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$50.240

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Microchip USA

USA . 2,531 parts In-Stock

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$128.731

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2,531

$128.731

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West Coast Incorporated

USA . 4,114 parts In-Stock

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Parana Technologies

USA . 3,062 parts In-Stock

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$2.115

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Supply Digital

USA . 1,239 parts In-Stock

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Assy Fe

Spain . 105 parts In-Stock

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality 2N5671 Power Bipolar Junction Transistor by Texas Instruments. With a maximum power dissipation of 80W and a maximum collector current of 30A, this NPN transistor is perfect for switching applications. Its durable metal package body ensures reliability and longevity, while its round shape and flange mount package style make it easy to integrate into your designs. Trust in Texas Instruments' reputation for excellence and innovation, and experience the value and performance that the 2N5671 brings to your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, making the transistor more reliable and efficient in high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in various electronic circuits.

Maximum Power Dissipation: 80 W

High power dissipation capability allows the transistor to handle large current and voltage levels, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 90 V

With a high voltage rating, this transistor can withstand high voltage spikes and surges, improving the overall reliability of the circuit.

Maximum Collector Current: 30 A

High collector current rating allows the transistor to handle large current loads, making it suitable for high-power applications.

Nominal Transition Frequency: 50 MHz

High transition frequency enables fast switching speeds and high-frequency operation, making it ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5671 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5671 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-481-4205, 5961004814205

NIIN

004814205

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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