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2N5656

Onsemi

2N5656 by Onsemi

2N5656 by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, max. collector-emitter voltage of 300V, and min. DC current gain of 5. Ideal for switching applications due to its single configuration and terminal form through-hole design.

Median Price

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Lifecycle Status

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Digiode

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Anansix

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Electronic Expediters

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Lakeview Electronics

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Lakeland Logistics Inc

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Bristol Electronics

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EMSNET

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Elcom Components

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Extreme Components

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IDEA Electronic Components Group

UK . 1,250 parts In-Stock

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Native Components

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MKK Technologies

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DigiPath Technology Company

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Northwest PG Solutions

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Kulean Microsystems

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Problanco Electronics

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Parana Technologies

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Overview

Experience the power and reliability of the 2N5656 by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this NPN transistor offers customers the assurance of superior performance and durability. With a maximum power dissipation of 20W and a maximum collector-emitter voltage of 300V, the 2N5656 is a versatile choice for a wide range of applications. Trust in Onsemi's reputation for excellence and invest in the 2N5656 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and amplification applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for efficient switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and fitting into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

No. of Terminals: 3

Three terminals enable versatile electrical connections.

Maximum Power Dissipation: 20 W

High power dissipation capability allows for handling significant loads.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates easy installation and secure mounting.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain ensures consistent and predictable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various environments.

Maximum Collector-Emitter Voltage: 300 V

High collector-emitter voltage rating allows for handling higher voltages.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and performance.

Maximum Collector Current (IC): 0.5 A

Maximum collector current rating supports medium-power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections.

Nominal Transition Frequency (fT): 10 MHz

High nominal transition frequency ensures fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5656 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5656 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-361-8751, 5961003618751

NIIN

003618751

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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