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2N6039G

Onsemi

2N6039G by Onsemi

2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.

Median Price

$0.349

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8 parts In-Stock

1+ parts

$0.349

100+ parts

$0.328

1k+ parts

$0.297

10k+ parts

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8

$0.349

$0.328

$0.297

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Distributors (In-Stock)

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Digiode

USA . 718 parts In-Stock

1+ parts

$0.332

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718

$0.332

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Vyrian

USA . 4,283 parts In-Stock

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4,283

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Bristol Electronics

USA . 8 parts In-Stock

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8

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Benley Electronics

USA . 90 parts In-Stock

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$0.300

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90

$0.300

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Corphita

USA . 1,846 parts In-Stock

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$0.314

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1,846

$0.314

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Corohmni

South Africa . 276 parts In-Stock

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$0.349

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276

$0.349

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Native Components

USA . 728 parts In-Stock

1+ parts

$8.270

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728

$8.270

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Northwest PG Solutions

USA . 130 parts In-Stock

1+ parts

$9.097

100+ parts

$8.187

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130

$9.097

$8.187

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AZTECH Wire

Italy . 433 parts In-Stock

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$15.320

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Perfect Parts

USA . 8,516 parts In-Stock

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SupplyDigital Components

Austria . 5,980 parts In-Stock

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TANS Electronics

Latvia . 4,875 parts In-Stock

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Problanco Electronics

Mexico . 3,873 parts In-Stock

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Kulean Microsystems

USA . 2,306 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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911

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Continental Prestige Electronics

USA . 8 parts In-Stock

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$0.316

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8

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$0.316

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Overview

Unleash the power of innovation with the 2N6039G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are ideal for amplifier applications. With its Darlington configuration and built-in diode and resistor, this product offers unparalleled performance and reliability. Experience the benefits of seamless integration, high power dissipation, and a wide operating temperature range. Trust Onsemi to provide cutting-edge solutions that exceed your expectations. Elevate your projects with the 2N6039G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, providing reliable performance in these applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor enhances the performance and efficiency of the transistor, making it a valuable component in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for the transistor to be used in a wide range of voltage applications, enhancing versatility.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and mount the transistor onto a circuit board, facilitating installation and maintenance.

Nominal Transition Frequency (fT): 25 MHz

The high nominal transition frequency enables the transistor to provide fast response times in amplification processes, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6039G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6039G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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