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BD675AG

Onsemi

BD675AG by Onsemi

BD675AG by Onsemi is a NPN power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max operating temp of 150°C and VCE of 45V, this transistor has IC up to 4A.

Median Price

$0.498

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,856 parts In-Stock

1+ parts

$0.360

100+ parts

$0.350

1k+ parts

$0.350

10k+ parts

-

3,856

$0.360

$0.350

$0.350

-

Farnell

UK . 989 parts In-Stock

1+ parts

$0.498

100+ parts

$0.264

1k+ parts

$0.212

10k+ parts

$0.178

989

$0.498

$0.264

$0.212

$0.178

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.682

100+ parts

$0.682

1k+ parts

$0.682

10k+ parts

-

450

$0.682

$0.682

$0.682

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 121 parts In-Stock

1+ parts

$0.077

100+ parts

-

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-

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121

$0.077

-

-

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TME

Poland . 108 parts In-Stock

1+ parts

$0.761

100+ parts

$0.293

1k+ parts

$0.262

10k+ parts

-

108

$0.761

$0.293

$0.262

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.864

100+ parts

-

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-

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300

$0.864

-

-

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Flip Electronics

USA . 8,500 parts In-Stock

1+ parts

-

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8,500

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-

-

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DigiKey Marketplace

USA . 8,500 parts In-Stock

1+ parts

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8,500

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Vyrian

USA . 5,217 parts In-Stock

1+ parts

-

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5,217

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ComSIT Distribution GmbH

Germany . 189 parts In-Stock

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189

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VNN

France . 58 parts In-Stock

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58

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,790 parts In-Stock

1+ parts

$0.069

100+ parts

$0.067

1k+ parts

$0.067

10k+ parts

-

1,790

$0.069

$0.067

$0.067

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Ampacity Inc.

Singapore . 1,564 parts In-Stock

1+ parts

$0.069

100+ parts

-

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-

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1,564

$0.069

-

-

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Corphita

USA . 515 parts In-Stock

1+ parts

$0.073

100+ parts

-

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-

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515

$0.073

-

-

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Corohmni

South Africa . 395 parts In-Stock

1+ parts

$0.081

100+ parts

-

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395

$0.081

-

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Continental Prestige Electronics

USA . 2,685 parts In-Stock

1+ parts

$0.669

100+ parts

-

1k+ parts

-

10k+ parts

$0.656

2,685

$0.669

-

-

$0.656

Argo Parts USA

USA . 2,610 parts In-Stock

1+ parts

$0.669

100+ parts

-

1k+ parts

-

10k+ parts

$0.649

2,610

$0.669

-

-

$0.649

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.682

100+ parts

$0.682

1k+ parts

$0.682

10k+ parts

-

450

$0.682

$0.682

$0.682

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Aztec Data Supply Inc.

USA . 2,309 parts In-Stock

1+ parts

$1.405

100+ parts

-

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2,309

$1.405

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Perfect Parts

USA . 13,151 parts In-Stock

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13,151

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Lixinc

USA . 5,488 parts In-Stock

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5,488

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Kulean Microsystems

USA . 4,458 parts In-Stock

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4,458

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Problanco Electronics

Mexico . 3,020 parts In-Stock

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3,020

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SupplyDigital Components

Austria . 2,572 parts In-Stock

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2,572

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TANS Electronics

Latvia . 2,047 parts In-Stock

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2,047

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.847

1k+ parts

$0.821

10k+ parts

$0.804

1,000

-

$0.847

$0.821

$0.804

Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$0.627

1k+ parts

$0.627

10k+ parts

$0.627

950

-

$0.627

$0.627

$0.627

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$0.627

1k+ parts

$0.627

10k+ parts

$0.627

950

-

$0.627

$0.627

$0.627

UHIMA Technologies

Türkiye . 80 parts In-Stock

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80

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Overview

Elevate your amplifier designs with the BD675AG by Onsemi, a high-quality Power Bipolar Junction Transistor that offers unmatched performance and reliability. With a Darlington configuration, built-in diode, and resistor, this NPN transistor is perfect for amplification applications. Manufactured by Onsemi, a trusted name in semiconductor technology, the BD675AG promises superior functionality and durability. Whether you're a hobbyist or a professional, this transistor's 40W maximum power dissipation and 4A maximum collector current ensure optimal performance. Upgrade your projects with the BD675AG and experience enhanced efficiency and precision like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the transistor, making it suitable for long-term use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a versatile choice for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor provide additional functionality and convenience in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit boards, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, making installation straightforward for users.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation rating, this transistor can handle significant power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and easy mounting options in a variety of equipment and circuit designs.

Minimum DC Current Gain (hFE): 750

A high minimum current gain ensures consistent and reliable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for use in demanding environments.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for safe operation in circuits with higher voltage requirements, enhancing the versatility of this product.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-term functionality in various electronic applications.

Maximum Collector Current (IC): 4 A

This transistor can handle high collector currents, making it suitable for applications that require high power output.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures secure connections, enhancing the durability and longevity of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit design, making this transistor user-friendly and easy to integrate into various systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD675AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD675AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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