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2N6286G

Onsemi

2N6286G by Onsemi

2N6286G by Onsemi is a PNP power BJT with a max collector current of 20A and a min DC current gain of 100. It features a built-in diode and resistor, making it suitable for amplifier applications. With a max power dissipation of 160W and an operating temperature up to 200 °C, it offers reliable performance in various high-power circuits.

Median Price

$6.240

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 413 parts In-Stock

1+ parts

$6.240

100+ parts

$6.120

1k+ parts

$5.990

10k+ parts

-

413

$6.240

$6.120

$5.990

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 471 parts In-Stock

1+ parts

$5.928

100+ parts

-

1k+ parts

-

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471

$5.928

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Freelance Electronics

USA . 84 parts In-Stock

1+ parts

$9.510

100+ parts

$9.986

1k+ parts

$9.415

10k+ parts

-

84

$9.510

$9.986

$9.415

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Vyrian

USA . 6,769 parts In-Stock

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6,769

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Distributors (Availability)

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Corphita

USA . 2,323 parts In-Stock

1+ parts

$5.616

100+ parts

-

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2,323

$5.616

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Corohmni

South Africa . 231 parts In-Stock

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$6.240

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231

$6.240

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AZTECH Wire

Italy . 861 parts In-Stock

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$16.990

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861

$16.990

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QUARKTWIN TECHNOLOGY LTD

USA . 16,220 parts In-Stock

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16,220

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SupplyDigital Components

Austria . 8,213 parts In-Stock

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8,213

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TANS Electronics

Latvia . 6,784 parts In-Stock

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6,784

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Kulean Microsystems

USA . 1,231 parts In-Stock

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1,231

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Problanco Electronics

Mexico . 1,048 parts In-Stock

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1,048

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Perfect Parts

USA . 608 parts In-Stock

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608

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Northwest PG Solutions

USA . 433 parts In-Stock

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433

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Native Components

USA . 185 parts In-Stock

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185

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Upgrade your power amplifier with the 2N6286G by Onsemi! Known for their top-notch quality and reliability, Onsemi delivers high-performance Power Bipolar Junction Transistors like no other. The 2N6286G is a PNP Darlington transistor with a built-in diode and resistor, perfect for boosting your amplifier's efficiency. With a maximum collector current of 20 A and a maximum power dissipation of 160 W, this transistor can handle your power needs with ease. Trust Onsemi to provide you with the best in transistor technology for all your amplifier applications.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, enhancing the reliability and longevity of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this product ideal for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and reduce component count.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio or signal amplification circuits.

Package Shape: ROUND

Round package shape offers a compact design, suitable for applications where space is limited.

Terminal Form: PIN/PEG

Pin/peg terminals provide easy and secure connections for convenient installation and maintenance.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit connection, reducing the risk of errors and improving overall reliability.

Maximum Power Dissipation (Abs): 160 W

High power dissipation capability allows the transistor to handle high power loads without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and secure attachment to the circuit board, enhancing stability and durability.

Minimum DC Current Gain (hFE): 100

High minimum current gain ensures consistent and reliable amplification performance across a wide range of operating conditions.

Maximum Operating Temperature: 200 °C

High maximum operating temperature tolerance allows the transistor to operate reliably in hot environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and compatibility with a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high reliability, low leakage current, and good thermal stability, ensuring long-term performance.

Maximum Collector Current (IC): 20 A

High collector current rating allows the transistor to handle high current loads, suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies circuit layout and connection, making it easier to integrate the transistor into the circuit.

Case Connection: COLLECTOR

Collector case connection facilitates easy heat dissipation and allows for efficient thermal management within the circuit.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency allows the transistor to switch quickly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6286G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6286G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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