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2N6292G

Onsemi

2N6292G by Onsemi

2N6292G by Onsemi is a NPN BJT transistor with max. power dissipation of 16W, max. collector current of 7A, and min. DC current gain of 30. Ideal for switching applications due to its single configuration and max. operating temp of 150°C.

Median Price

$1.360

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,650 parts In-Stock

1+ parts

$1.217

100+ parts

$0.593

1k+ parts

$0.410

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-

1,650

$1.217

$0.593

$0.410

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Farnell

UK . 1,590 parts In-Stock

1+ parts

$1.360

100+ parts

$0.542

1k+ parts

$0.375

10k+ parts

$0.368

1,590

$1.360

$0.542

$0.375

$0.368

DigiKey

USA . 622 parts In-Stock

1+ parts

$1.600

100+ parts

$0.677

1k+ parts

$0.486

10k+ parts

$0.386

622

$1.600

$0.677

$0.486

$0.386

Mouser Electronics

USA . 232 parts In-Stock

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$1.600

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$0.638

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232

$1.600

$0.638

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Newark

USA . 1,325 parts In-Stock

1+ parts

$1.760

100+ parts

$0.837

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$0.646

10k+ parts

$0.547

1,325

$1.760

$0.837

$0.646

$0.547

Element14

Singapore . 1,590 parts In-Stock

1+ parts

$2.320

100+ parts

$0.925

1k+ parts

$0.640

10k+ parts

$0.628

1,590

$2.320

$0.925

$0.640

$0.628

Arrow

USA . 1,950 parts In-Stock

1+ parts

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$0.392

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$0.392

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Verical

USA . 1,950 parts In-Stock

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$0.392

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$0.392

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Master Electronics

USA . 1,200 parts In-Stock

1+ parts

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100+ parts

$0.851

1k+ parts

$0.435

10k+ parts

$0.425

1,200

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$0.851

$0.435

$0.425

EBV Elektronik

Germany . 100 parts In-Stock

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100

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Distributors (In-Stock)

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Digiode

USA . 657 parts In-Stock

1+ parts

$0.404

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657

$0.404

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Nova Conductors

Japan . 50 parts In-Stock

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$0.582

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50

$0.582

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TME

Poland . 943 parts In-Stock

1+ parts

$1.400

100+ parts

$0.654

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943

$1.400

$0.654

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VNN

France . 1,699 parts In-Stock

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1,699

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IBS Electronics

USA . 1,200 parts In-Stock

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100+ parts

$0.610

1k+ parts

$0.575

10k+ parts

$0.547

1,200

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$0.610

$0.575

$0.547

Vyrian

USA . 1,037 parts In-Stock

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1,037

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NAC Semi

USA . 850 parts In-Stock

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$1.820

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850

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$1.820

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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Bristol Electronics

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.382

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100

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$0.382

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Flip Electronics

USA . 100 parts In-Stock

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100

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Dan-Mar Components

USA . 100 parts In-Stock

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100

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LWI Electronics Inc

India . 95 parts In-Stock

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95

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PC Components Company LLC

USA . 20 parts In-Stock

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20

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Distributors (Availability)

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Corphita

USA . 51 parts In-Stock

1+ parts

$0.382

100+ parts

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51

$0.382

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Corohmni

South Africa . 446 parts In-Stock

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$0.400

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446

$0.400

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Semicontronic

India . 1,104 parts In-Stock

1+ parts

$0.451

100+ parts

$0.440

1k+ parts

$0.437

10k+ parts

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1,104

$0.451

$0.440

$0.437

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Ampacity Inc.

Singapore . 1,014 parts In-Stock

1+ parts

$0.451

100+ parts

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1,014

$0.451

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Benley Electronics

USA . 10 parts In-Stock

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$0.500

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10

$0.500

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Continental Prestige Electronics

USA . 1,120 parts In-Stock

1+ parts

$0.582

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$0.571

1,120

$0.582

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$0.571

Netroflash

USA . 1,000 parts In-Stock

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$0.582

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1,000

$0.582

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Argo Parts USA

USA . 16 parts In-Stock

1+ parts

$0.582

100+ parts

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$0.565

16

$0.582

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$0.565

Aztec Data Supply Inc.

USA . 3,775 parts In-Stock

1+ parts

$0.766

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3,775

$0.766

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.768

100+ parts

$0.730

1k+ parts

$0.730

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2,500

$0.768

$0.730

$0.730

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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Problanco Electronics

Mexico . 7,950 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,020 parts In-Stock

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6,020

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Kulean Microsystems

USA . 4,458 parts In-Stock

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Perfect Parts

USA . 3,733 parts In-Stock

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3,733

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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SupplyDigital Components

Austria . 1,795 parts In-Stock

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1,795

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TANS Electronics

Latvia . 644 parts In-Stock

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644

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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514

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Eastek

USA . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the 2N6292G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Power BJT transistor is perfect for switching applications, offering a maximum collector current of 7A and a transition frequency of 4 MHz. With a package style of flange mount and a maximum operating temperature of 150°C, this transistor provides unmatched performance and durability. Upgrade your projects today with the 2N6292G and experience the difference in efficiency and effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, making this transistor versatile and widely applicable.

Configuration: SINGLE

Simplified circuit design and ease of use in various applications.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it reliable for control and power management tasks.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into circuit boards.

Terminal Form: THROUGH-HOLE

Allows for easy and secure soldering onto circuit boards.

Maximum Power Dissipation (Abs): 16 W

High power handling capability makes it suitable for demanding applications.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification of current signals.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments.

Maximum Collector-Emitter Voltage: 70 V

Can handle high voltage levels, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various applications.

Maximum Collector Current (IC): 7 A

High current rating enables the transistor to handle heavy loads.

Terminal Finish: TIN

Tin finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: SINGLE

Simplified installation and connection process.

Case Connection: COLLECTOR

Clear labeling for easy identification of terminals.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6292G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6292G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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