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BD810G

Onsemi

BD810G by Onsemi

BD810G by Onsemi is a PNP BJT transistor with 80V VCE, 10A IC, and 90W power dissipation. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.135

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 78 parts In-Stock

1+ parts

$1.120

100+ parts

$0.757

1k+ parts

$0.553

10k+ parts

$0.483

78

$1.120

$0.757

$0.553

$0.483

Farnell

UK . 1,831 parts In-Stock

1+ parts

$1.150

100+ parts

-

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-

10k+ parts

-

1,831

$1.150

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Element14

Singapore . 78 parts In-Stock

1+ parts

$1.580

100+ parts

$1.030

1k+ parts

$0.722

10k+ parts

$0.616

78

$1.580

$1.030

$0.722

$0.616

Rochester

USA . 1,831 parts In-Stock

1+ parts

-

100+ parts

$0.584

1k+ parts

$0.485

10k+ parts

$0.432

1,831

-

$0.584

$0.485

$0.432

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 148 parts In-Stock

1+ parts

$0.505

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-

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148

$0.505

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Vyrian

USA . 3,349 parts In-Stock

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3,349

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Chip Stock

USA . 2,871 parts In-Stock

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2,871

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Pegasus Components GmbH

Germany . 450 parts In-Stock

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450

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R&J Components

USA . 106 parts In-Stock

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106

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Component Sense

UK . 91 parts In-Stock

1+ parts

-

100+ parts

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$0.735

91

-

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-

$0.735

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,176 parts In-Stock

1+ parts

$0.479

100+ parts

-

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2,176

$0.479

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Corohmni

South Africa . 413 parts In-Stock

1+ parts

$0.532

100+ parts

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413

$0.532

-

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Component Stockers USA

USA . 1,563 parts In-Stock

1+ parts

$0.540

100+ parts

$0.510

1k+ parts

$0.460

10k+ parts

-

1,563

$0.540

$0.510

$0.460

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Continental Prestige Electronics

USA . 2,356 parts In-Stock

1+ parts

$1.010

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2,356

$1.010

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Microchip USA

USA . 10,290 parts In-Stock

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10,290

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Kulean Microsystems

USA . 5,370 parts In-Stock

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5,370

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SupplyDigital Components

Austria . 5,297 parts In-Stock

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5,297

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TANS Electronics

Latvia . 4,478 parts In-Stock

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4,478

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 2,629 parts In-Stock

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2,629

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Northwest PG Solutions

USA . 1,252 parts In-Stock

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1,252

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Kepictronics

USA . 700 parts In-Stock

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700

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Perfect Parts

USA . 409 parts In-Stock

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409

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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337

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Native Components

USA . 257 parts In-Stock

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257

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SIE Connect GmbH (Excess)

Germany . 5 parts In-Stock

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5

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Overview

Elevate your amplification needs with the BD810G by Onsemi, a high-quality Power BJT transistor that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is perfect for amplifier applications, delivering exceptional power dissipation of 90W and a maximum collector current of 10A. With a minimum DC current gain of 15, this transistor ensures optimal functionality even in demanding conditions. Upgrade your electronic projects with the BD810G and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 90 W

High power dissipation capability allows this transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliable performance even in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating provides versatility in circuit design and compatibility with a wide range of applications.

Maximum Collector Current (IC): 10 A

High collector current rating allows this transistor to handle large currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 1.5 MHz

The high transition frequency ensures fast switching speeds and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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