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BD810AJ

Onsemi

BD810AJ by Onsemi

The Onsemi BD810AJ is a PNP BJT transistor with 80V VCE, 10A IC, and hFE of 15. Ideal for amplifier applications due to its silicon material and 1.5MHz fT. The through-hole package style makes it suitable for flange mount configurations in various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,404 parts In-Stock

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Digiode

USA . 2,226 parts In-Stock

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Native Components

USA . 171 parts In-Stock

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$0.111

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$0.106

171

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Northwest PG Solutions

USA . 1,855 parts In-Stock

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$0.122

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$0.108

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$0.108

Kulean Microsystems

USA . 8,361 parts In-Stock

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Problanco Electronics

Mexico . 7,062 parts In-Stock

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SupplyDigital Components

Austria . 6,228 parts In-Stock

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TANS Electronics

Latvia . 2,482 parts In-Stock

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Corphita

USA . 1,132 parts In-Stock

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UHIMA Technologies

Türkiye . 869 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BD810AJ Power Bipolar Junction Transistor! Crafted by industry leader Onsemi, this PNP transistor offers unparalleled quality and reliability for your amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this transistor delivers exceptional performance. Say goodbye to subpar products and experience the difference with the Onsemi BD810AJ - where quality meets value. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it easier to handle and less prone to damage during installation and use.

Polarity or Channel Type: PNP

The PNP configuration allows for easy compatibility with other PNP transistors and circuit designs, making integration into existing systems convenient.

Configuration: SINGLE

The single configuration simplifies circuit design and troubleshooting, making it a reliable choice for various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement on circuit boards and efficient use of space, contributing to a tidy and organized circuit layout.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide strong physical connections and easy soldering, ensuring reliable electrical connections in electronic circuits.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the risk of incorrect wiring, making the transistor user-friendly for electronics hobbyists and professionals.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting onto surfaces, ensuring stability in various applications and environments.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures consistent and reliable amplification of input signals, leading to accurate and high-quality performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V provides a wide operating range, allowing for versatility in different amplifier applications.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability in transistors, making them suitable for various electronic applications due to their stability and efficiency.

Maximum Collector Current (IC): 10 A

With a high maximum collector current of 10 A, this transistor can handle large current loads, making it suitable for high-power amplifier circuits and other applications requiring high current capability.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection and ease of soldering during circuit assembly.

Terminal Position: SINGLE

The single terminal position simplifies the connection process, reducing the risk of errors and making it easier to integrate the transistor into circuit designs.

Case Connection: COLLECTOR

The collector case connection simplifies the circuit design and provides a stable connection for the collector terminal, ensuring consistent performance in amplifier applications.

Nominal Transition Frequency (fT): 1.5 MHz

The nominal transition frequency of 1.5 MHz indicates the transistor's ability to switch rapidly between on and off states, making it suitable for high-frequency amplification applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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