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BD810AS

Onsemi

BD810AS by Onsemi

The Onsemi BD810AS is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The through-hole package with flange mount style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,326 parts In-Stock

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Digiode

USA . 1,264 parts In-Stock

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1,264

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Distributors (Availability)

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Native Components

USA . 192 parts In-Stock

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$0.149

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$0.144

192

$0.149

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$0.144

Northwest PG Solutions

USA . 2,114 parts In-Stock

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$0.164

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$0.145

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$0.164

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$0.145

TANS Electronics

Latvia . 2,359 parts In-Stock

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2,359

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Problanco Electronics

Mexico . 1,886 parts In-Stock

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SupplyDigital Components

Austria . 1,803 parts In-Stock

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Kulean Microsystems

USA . 1,777 parts In-Stock

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UHIMA Technologies

Türkiye . 409 parts In-Stock

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Corphita

USA . 257 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi BD810AS Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor offers superior quality and reliability for your amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this transistor delivers exceptional performance in a convenient flange mount package. Experience the value and benefits of the BD810AS, providing customers with unparalleled efficiency and precision for their electronic projects. Elevate your designs with the Onsemi BD810AS today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, expanding the versatility of the product.

Configuration: SINGLE

Simplified setup and operation with a single transistor configuration.

Transistor Application: AMPLIFIER

Ideal for amplifier applications, delivering efficient signal amplification.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into circuitry.

Terminal Form: THROUGH-HOLE

Convenient installation on a circuit board with through-hole terminals.

No. of Terminals: 3

Simple and straightforward connectivity with just three terminals.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in various applications.

Minimum DC Current Gain (hFE): 15

Ensures consistent and stable performance with a minimum DC current gain of 15.

Maximum Operating Temperature: 150 °C

Can handle high-temperature environments with a maximum operating temperature of 150 °C.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring up to 80 volts of collector-emitter voltage.

Transistor Element Material: SILICON

Reliable and durable performance with silicon as the transistor element material.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents up to 10 amps.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability with tin lead terminal finish.

Terminal Position: SINGLE

Simplified connection with a single terminal position.

Case Connection: COLLECTOR

Efficient and effective case connection through the collector terminal.

Nominal Transition Frequency (fT): 1.5 MHz

Suitable for applications requiring a nominal transition frequency of 1.5 MHz.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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