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BD810BD

Onsemi

BD810BD by Onsemi

The Onsemi BD810BD is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,761 parts In-Stock

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Digiode

USA . 1,571 parts In-Stock

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1,571

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Native Components

USA . 705 parts In-Stock

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$130.037

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$124.835

705

$130.037

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$124.835

Northwest PG Solutions

USA . 2,266 parts In-Stock

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$143.040

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$143.040

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SupplyDigital Components

Austria . 4,854 parts In-Stock

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4,854

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TANS Electronics

Latvia . 3,554 parts In-Stock

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3,554

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Problanco Electronics

Mexico . 908 parts In-Stock

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Corphita

USA . 864 parts In-Stock

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UHIMA Technologies

Türkiye . 748 parts In-Stock

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Kulean Microsystems

USA . 572 parts In-Stock

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Corohmni

South Africa . 474 parts In-Stock

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Overview

Unleash the power of the BD810BD by Onsemi, a top-quality Power Bipolar Junction Transistor that guarantees reliability and performance. Manufactured by Onsemi, a leader in semiconductor technology, this PNP transistor is perfect for amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this transistor offers unmatched value and benefits to customers. Upgrade your electronic projects with the BD810BD and experience superior quality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Suitable for various applications including amplifiers due to its PNP configuration.

Minimum DC Current Gain (hFE): 15

Ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Capable of operating in high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

Able to handle higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 10 A

Capable of handling high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 1.5 MHz

Capable of high frequency operations, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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