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BD810AF

Onsemi

BD810AF by Onsemi

The Onsemi BD810AF is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a PLASTIC/EPOXY package in RECTANGULAR shape with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,564 parts In-Stock

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Vyrian

USA . 936 parts In-Stock

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Native Components

USA . 41 parts In-Stock

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$0.072

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$0.069

41

$0.072

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$0.069

Northwest PG Solutions

USA . 655 parts In-Stock

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$0.079

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$0.069

655

$0.079

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$0.069

TANS Electronics

Latvia . 8,226 parts In-Stock

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Kulean Microsystems

USA . 7,707 parts In-Stock

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7,707

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SupplyDigital Components

Austria . 5,104 parts In-Stock

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Corphita

USA . 906 parts In-Stock

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Problanco Electronics

Mexico . 598 parts In-Stock

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UHIMA Technologies

Türkiye . 530 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality BD810AF Power BJT by Onsemi. Known for its reliability and durability, Onsemi products are trusted by professionals worldwide. Ideal for amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 80V and a DC current gain of 15, providing excellent performance in various circuit designs. Upgrade your projects with the BD810AF and experience the value and benefits that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and alignment on a circuit board, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and make it easier to solder onto a circuit board.

No. of Terminals: 3

Having 3 terminals allows for versatile connections and flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount style enables easy mounting and securing of the transistor in various applications.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable amplification of signals.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for handling higher voltages in circuits without damage.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making this transistor suitable for various applications.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle higher currents, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead finish on terminals provides good solderability and long-lasting connections.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit layout and assembly.

Case Connection: COLLECTOR

The case connection at the collector allows for easy connection to external components or heatsinks.

Nominal Transition Frequency (fT): 1.5 MHz

The nominal transition frequency of 1.5MHz indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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