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BD810BA

Onsemi

BD810BA by Onsemi

The Onsemi BD810BA is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 10A. It has a min. DC current gain of 15, ideal for amplifier applications due to its single configuration and silicon element material. Operating up to 150 °C, it features through-hole terminals in a rectangular package style for flange mount connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,415 parts In-Stock

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Digiode

USA . 362 parts In-Stock

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362

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Native Components

USA . 404 parts In-Stock

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$0.162

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$0.156

404

$0.162

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$0.156

Northwest PG Solutions

USA . 1,270 parts In-Stock

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$0.179

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$0.158

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$0.179

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$0.158

SupplyDigital Components

Austria . 6,071 parts In-Stock

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Kulean Microsystems

USA . 4,586 parts In-Stock

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TANS Electronics

Latvia . 1,286 parts In-Stock

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Corphita

USA . 1,248 parts In-Stock

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Problanco Electronics

Mexico . 1,147 parts In-Stock

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UHIMA Technologies

Türkiye . 734 parts In-Stock

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Corohmni

South Africa . 66 parts In-Stock

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Overview

Discover the power and reliability of the BD810BA by Onsemi, a top-quality Power Bipolar Junction Transistor (BJT) designed for amplifier applications. With its impressive maximum collector current of 10A and high DC current gain, this PNP transistor provides exceptional performance in a variety of electronic devices. Onsemi's commitment to innovation and excellence ensures that each BD810BA is crafted with precision and care, offering customers unmatched value and dependability. Upgrade your projects with the BD810BA and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as amplifiers and switches.

Configuration: SINGLE

Simplified design with single transistor configuration, making it easier to handle and implement.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimized performance in such systems.

Terminal Form: THROUGH-HOLE

Easy to solder and mount on a PCB, providing secure connections.

No. of Terminals: 3

Simple and straightforward connection setup with three terminals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is crucial.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage rating, making it suitable for applications requiring higher voltages.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels, suitable for power applications.

Nominal Transition Frequency (fT): 1.5 MHz

Optimized for high-frequency applications, ensuring efficient operation at higher frequencies.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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