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BD810BV

Onsemi

BD810BV by Onsemi

The Onsemi BD810BV is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Digiode

USA . 2,103 parts In-Stock

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Vyrian

USA . 1,037 parts In-Stock

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SupplyDigital Components

Austria . 6,032 parts In-Stock

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TANS Electronics

Latvia . 5,327 parts In-Stock

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Problanco Electronics

Mexico . 4,815 parts In-Stock

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Corphita

USA . 2,400 parts In-Stock

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Kulean Microsystems

USA . 2,002 parts In-Stock

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Northwest PG Solutions

USA . 1,616 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Corohmni

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Native Components

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Overview

Unleash the power of innovation with the Onsemi BD810BV Power Bipolar Junction Transistor. Crafted by a renowned manufacturer, this PNP transistor offers exceptional quality and reliability for amplifier applications. Its flange mount package design ensures easy installation, while its high collector current and voltage ratings provide unmatched performance. Experience superior efficiency and durability with the BD810BV, setting a new standard in the world of electronic components. Elevate your projects to new heights with this cutting-edge transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, allowing for effective circuit design.

Configuration: SINGLE

Simplifies circuit design and installation, making it easy to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency.

Package Shape: RECTANGULAR

Efficient use of space and easy to mount on PCBs, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Ideal for through-hole soldering, providing secure connections and easy installation.

No. of Terminals: 3

Simple and straightforward connection setup, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting on a flange, providing stability and reliability in various applications.

Minimum DC Current Gain (hFE): 15

Ensures sufficient gain for amplification purposes, enhancing the performance of the transistor.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, increasing the versatility of the transistor.

Maximum Collector-Emitter Voltage: 80 V

Can handle higher voltages, suitable for applications where higher voltage levels are required.

Transistor Element Material: SILICON

Provides high conductivity and reliability, ensuring stable performance over a long period of time.

Maximum Collector Current (IC): 10 A

Capable of handling high currents, making it suitable for applications that require high power output.

Terminal Finish: TIN LEAD

Ensures good solderability and reliable connections, enhancing the overall performance of the transistor.

Terminal Position: SINGLE

Simplifies the connection setup, making it easier to integrate into different circuit configurations.

Case Connection: COLLECTOR

Specific connection point for the collector, facilitating proper circuit design and installation.

Nominal Transition Frequency (fT): 1.5 MHz

Provides good frequency response, suitable for amplification applications with moderate frequency requirements.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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