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BD810AU

Onsemi

BD810AU by Onsemi

The Onsemi BD810AU is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The through-hole package style features a flange mount design with tin-lead terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,364 parts In-Stock

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2,364

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Vyrian

USA . 2,072 parts In-Stock

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2,072

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Distributors (Availability)

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Native Components

USA . 590 parts In-Stock

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$0.134

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$0.129

590

$0.134

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$0.129

Northwest PG Solutions

USA . 1,370 parts In-Stock

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$0.148

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$0.130

1,370

$0.148

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$0.130

Problanco Electronics

Mexico . 6,640 parts In-Stock

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6,640

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Kulean Microsystems

USA . 6,167 parts In-Stock

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6,167

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SupplyDigital Components

Austria . 5,728 parts In-Stock

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TANS Electronics

Latvia . 5,486 parts In-Stock

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Corphita

USA . 2,339 parts In-Stock

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2,339

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UHIMA Technologies

Türkiye . 717 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the BD810AU by Onsemi, a leading manufacturer in the industry. This power bipolar junction transistor (BJT) is perfect for amplifier applications, offering a single configuration with a maximum collector-emitter voltage of 80V and a maximum collector current of 10A. With a minimum DC current gain of 15 and a nominal transition frequency of 1.5 MHz, this transistor provides exceptional performance. Upgrade your projects with the BD810AU and experience the value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: PNP

Suitable for various amplifier applications.

Minimum DC Current Gain (hFE): 15

Ensures reliable amplification of signals.

Maximum Collector-Emitter Voltage: 80 V

Allows for handling of higher voltage levels.

Maximum Collector Current (IC): 10 A

Capable of handling high current loads effectively.

Nominal Transition Frequency (fT): 1.5 MHz

Enables high-frequency operation for amplification purposes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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