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BD810

Onsemi

BD810 by Onsemi

The Onsemi BD810 is a PNP BJT transistor with 80V VCE, 10A IC, and 90W power dissipation. Ideal for amplifier applications, it has a hFE of 15 and operates up to 150 °C. The through-hole package with flange mount style makes it suitable for various electronic designs.

Median Price

$0.281

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,927 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.252

10k+ parts

$0.225

1,927

-

$0.304

$0.252

$0.225

DigiKey

USA . 1,927 parts In-Stock

1+ parts

-

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$0.260

1,927

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$0.260

Verical

USA . 1,927 parts In-Stock

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$0.281

1,927

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$0.281

Distributors (In-Stock)

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Digiode

USA . 199 parts In-Stock

1+ parts

$0.237

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199

$0.237

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Vyrian

USA . 687 parts In-Stock

1+ parts

$0.249

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687

$0.249

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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500

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LittleDiode

UK . 72 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 39 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 32 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 25 parts In-Stock

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25

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GES GmbH

Germany . 19 parts In-Stock

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ECAB

Sweden . 18 parts In-Stock

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ABC Electronics Ltd.

UK . 8 parts In-Stock

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Goldney Electronics S.L.

Spain . 5 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 4 parts In-Stock

1+ parts

$0.182

100+ parts

-

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$0.175

4

$0.182

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$0.175

Northwest PG Solutions

USA . 99 parts In-Stock

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$0.201

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$0.177

99

$0.201

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$0.177

Corphita

USA . 1,506 parts In-Stock

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$0.224

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$0.224

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Corohmni

South Africa . 328 parts In-Stock

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$0.249

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328

$0.249

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QUARKTWIN TECHNOLOGY LTD

USA . 26,888 parts In-Stock

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Kulean Microsystems

USA . 6,888 parts In-Stock

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Problanco Electronics

Mexico . 6,069 parts In-Stock

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6,069

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SupplyDigital Components

Austria . 5,452 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,233 parts In-Stock

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Continental Prestige Electronics

USA . 1,927 parts In-Stock

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$0.225

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1,927

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Assy Fe

Spain . 1,110 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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899

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Overview

Looking for a reliable solution for your amplifier needs? Look no further than the Onsemi BD810 Power Bipolar Junction Transistor. With a maximum power dissipation of 90W and a maximum collector current of 10A, this PNP transistor offers high performance and durability. Whether you're working on audio amplifiers, industrial control systems, or power supplies, the BD810 is the perfect choice. Trust Onsemi's reputation for quality and innovation to deliver the best-in-class components for your project. Upgrade your design with the BD810 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material allows for excellent insulation and resistance to environmental factors, making the transistor more durable and reliable.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuits and applications that require a PNP transistor.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to work with in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Maximum Power Dissipation (Abs): 90 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating allows for use in circuits that require high voltage handling capabilities, providing versatility in applications.

Maximum Collector Current (IC): 10 A

High collector current rating allows for handling large currents, making it suitable for applications that require high-current capabilities.

Nominal Transition Frequency (fT): 1.5 MHz

With a high transition frequency, this transistor can operate efficiently at high frequencies, making it ideal for applications that require fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-326-2358, 5961013262358, 5961-99-788-2749, 5961997882749

NIIN

013262358, 997882749

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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