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BD810BU

Onsemi

BD810BU by Onsemi

The Onsemi BD810BU is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 10A. Ideal for amplifier applications, it has a min. DC current gain of 15 (hFE) and operates up to 150 °C temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,659 parts In-Stock

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1,659

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Vyrian

USA . 1,595 parts In-Stock

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1,595

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SupplyDigital Components

Austria . 5,452 parts In-Stock

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Kulean Microsystems

USA . 5,159 parts In-Stock

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TANS Electronics

Latvia . 3,249 parts In-Stock

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3,249

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Problanco Electronics

Mexico . 3,016 parts In-Stock

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3,016

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Northwest PG Solutions

USA . 1,871 parts In-Stock

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1,871

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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765

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Corphita

USA . 290 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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Native Components

USA . 137 parts In-Stock

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Overview

Experience the power of reliable performance with the BD810BU by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for various amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this PNP transistor offers exceptional value and benefits to customers looking for high-performance components. Trust Onsemi to provide you with the quality and reliability you need for your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplified design and ease of use in single transistor applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance in such applications.

Package Shape: RECTANGULAR

Compact design for space-efficient installations.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to PCBs.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting of the transistor in various equipment.

Minimum DC Current Gain (hFE): 15

Ensures consistent amplification performance in circuits.

Maximum Operating Temperature: 150 °C

Can be used in a wide range of temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

Handles high voltage loads with ease.

Transistor Element Material: SILICON

Provides good electrical properties, reliability, and performance.

Maximum Collector Current (IC): 10 A

Suitable for applications requiring high current handling capabilities.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability.

Terminal Position: SINGLE

Simplifies circuit connections and layout.

Case Connection: COLLECTOR

Clear indication of the transistor connection for proper circuit design.

Nominal Transition Frequency (fT): 1.5 MHz

Suitable for high-frequency applications such as signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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