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BD810AN

Onsemi

BD810AN by Onsemi

The Onsemi BD810AN is a PNP BJT transistor with 80V VCE, 10A IC, and 1.5MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. This single configuration transistor comes in a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,205 parts In-Stock

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Digiode

USA . 2,131 parts In-Stock

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2,131

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TANS Electronics

Latvia . 7,586 parts In-Stock

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SupplyDigital Components

Austria . 2,680 parts In-Stock

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Corphita

USA . 1,911 parts In-Stock

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Kulean Microsystems

USA . 1,872 parts In-Stock

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Northwest PG Solutions

USA . 955 parts In-Stock

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955

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Native Components

USA . 848 parts In-Stock

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848

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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Corohmni

South Africa . 334 parts In-Stock

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Problanco Electronics

Mexico . 258 parts In-Stock

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Overview

Unlock the power of high-quality performance with the BD810AN by Onsemi. Manufactured by a trusted industry leader, this Power Bipolar Junction Transistor (BJT) offers unparalleled reliability and efficiency in amplifier applications. With a maximum collector-emitter voltage of 80V and a nominal transition frequency of 1.5 MHz, this transistor delivers exceptional value and benefits to customers looking for superior performance. Trust Onsemi's expertise and experience to provide you with the best-in-class solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, which is ideal for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP transistors in circuits, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in individual applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor provides reliable and efficient amplification.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80V allows for use in a wide range of voltage applications, providing versatility.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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