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BD810DW

Onsemi

BD810DW by Onsemi

The Onsemi BD810DW is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 10A. Ideal for amplifier applications, it has a min. DC current gain of 15 (hFE) and operates up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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2

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Vyrian

USA . 552 parts In-Stock

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Digiode

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Native Components

USA . 718 parts In-Stock

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Northwest PG Solutions

USA . 728 parts In-Stock

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TANS Electronics

Latvia . 4,717 parts In-Stock

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Problanco Electronics

Mexico . 4,420 parts In-Stock

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SupplyDigital Components

Austria . 1,930 parts In-Stock

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UHIMA Technologies

Türkiye . 618 parts In-Stock

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Corphita

USA . 554 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Discover the BD810DW by Onsemi, a top-quality Power Bipolar Junction Transistor designed for various amplifier applications. With its PNP configuration and 80V maximum collector-emitter voltage, this transistor offers optimal performance and reliability. Manufactured by Onsemi, a trusted name in the industry, the BD810DW provides customers with exceptional value and benefits. Whether you're looking to enhance your amplifier circuits or improve overall power efficiency, this product delivers unparalleled advantages that meet your needs. Experience the difference with the BD810DW from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

Allows for easy integration into circuits that require PNP transistors, expanding the compatibility of this product.

Configuration: SINGLE

Simplified design and easier implementation in circuit layouts, making it user-friendly for applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimized performance in audio or signal amplification circuits.

Package Shape: RECTANGULAR

Facilitates easy handling and mounting of the transistor, making it convenient for assembly and integration.

Terminal Form: THROUGH-HOLE

Enables sturdy and secure connection to circuit boards, reducing the risk of loose connections or damage during operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable operation in environments with elevated heat levels.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage capabilities, providing flexibility in circuit design and operation.

Maximum Collector Current (IC): 10 A

High collector current rating allows for use in circuits with higher power requirements, ensuring efficient operation.

Nominal Transition Frequency (fT): 1.5 MHz

Offers good frequency response for amplification applications, delivering reliable performance in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD810DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD810DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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