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2N5684G

Onsemi

2N5684G by Onsemi

Onsemi's 2N5684G is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. current of 50A, and power dissipation of 300W. Ideal for switching applications due to its single configuration and high operating temperature range (-65 to 200 °C).

Median Price

$10.671

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 300 parts In-Stock

1+ parts

$9.097

100+ parts

$4.165

1k+ parts

-

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300

$9.097

$4.165

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-

Farnell

UK . 31 parts In-Stock

1+ parts

$12.710

100+ parts

$7.980

1k+ parts

$7.820

10k+ parts

-

31

$12.710

$7.980

$7.820

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Mouser Electronics

USA . 96 parts In-Stock

1+ parts

$14.540

100+ parts

$9.050

1k+ parts

-

10k+ parts

-

96

$14.540

$9.050

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DigiKey

USA . 13 parts In-Stock

1+ parts

$16.640

100+ parts

$9.054

1k+ parts

$8.925

10k+ parts

-

13

$16.640

$9.054

$8.925

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Newark

USA . 29 parts In-Stock

1+ parts

$17.140

100+ parts

$9.320

1k+ parts

$9.190

10k+ parts

-

29

$17.140

$9.320

$9.190

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Element14

Singapore . 31 parts In-Stock

1+ parts

$21.370

100+ parts

$13.410

1k+ parts

$13.150

10k+ parts

-

31

$21.370

$13.410

$13.150

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Chip1Stop

Japan . 700 parts In-Stock

1+ parts

-

100+ parts

$8.726

1k+ parts

$8.553

10k+ parts

-

700

-

$8.726

$8.553

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Future Electronics

Canada . 200 parts In-Stock

1+ parts

-

100+ parts

$9.350

1k+ parts

$9.240

10k+ parts

-

200

-

$9.350

$9.240

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Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$10.671

1k+ parts

-

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100

-

$10.671

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Master Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$9.070

1k+ parts

$8.920

10k+ parts

-

100

-

$9.070

$8.920

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Rochester

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$8.930

1k+ parts

$7.990

10k+ parts

$7.520

90

-

$8.930

$7.990

$7.520

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 619 parts In-Stock

1+ parts

$12.834

100+ parts

-

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619

$12.834

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Vyrian

USA . 2,483 parts In-Stock

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2,483

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IBS Electronics

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$12.889

1k+ parts

$12.679

10k+ parts

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300

-

$12.889

$12.679

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NAC Semi

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$19.220

1k+ parts

$17.470

10k+ parts

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200

-

$19.220

$17.470

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Zilex Electronics Inc.

Canada . 100 parts In-Stock

1+ parts

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100+ parts

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100

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 802 parts In-Stock

1+ parts

$1.140

100+ parts

-

1k+ parts

$0.796

10k+ parts

$0.796

802

$1.140

-

$0.796

$0.796

Corohmni

South Africa . 285 parts In-Stock

1+ parts

$8.553

100+ parts

-

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285

$8.553

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Corphita

USA . 580 parts In-Stock

1+ parts

$12.159

100+ parts

-

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580

$12.159

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Continental Prestige Electronics

USA . 27 parts In-Stock

1+ parts

$13.220

100+ parts

$9.990

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-

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27

$13.220

$9.990

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Native Components

USA . 688 parts In-Stock

1+ parts

$69.720

100+ parts

-

1k+ parts

-

10k+ parts

$66.931

688

$69.720

-

-

$66.931

Northwest PG Solutions

USA . 1,733 parts In-Stock

1+ parts

$76.692

100+ parts

-

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1,733

$76.692

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QUARKTWIN TECHNOLOGY LTD

USA . 25,110 parts In-Stock

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Kulean Microsystems

USA . 7,692 parts In-Stock

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7,692

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SupplyDigital Components

Austria . 7,661 parts In-Stock

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Problanco Electronics

Mexico . 7,231 parts In-Stock

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Kepictronics

USA . 4,642 parts In-Stock

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4,642

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Microchip USA

USA . 4,357 parts In-Stock

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TANS Electronics

Latvia . 3,449 parts In-Stock

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3,449

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Perfect Parts

USA . 813 parts In-Stock

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813

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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730

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GreenTree Electronics

Israel . 75 parts In-Stock

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75

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Authorized Procurement Solutions

USA . 75 parts In-Stock

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75

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Overview

Unlock the power of innovation with the 2N5684G by Onsemi. As a leading manufacturer in the industry of Power Bipolar Junction Transistors (BJT), Onsemi brings unparalleled quality and reliability to its products. Ideal for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 50A, making it a versatile choice for a wide range of projects. With a high power dissipation of 300W and a minimum DC current gain of 5, the 2N5684G guarantees optimal performance and efficiency. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides excellent heat dissipation, allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: PNP

PNP type transistors are commonly used for high power switching applications, making this product suitable for such purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows the transistor to handle large power loads without failure.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating enables the transistor to withstand higher voltages, expanding its range of potential applications.

Nominal Transition Frequency (fT): 2 MHz

Higher transition frequency indicates faster switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5684G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5684G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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