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NJL0281DG

Onsemi

NJL0281DG by Onsemi

NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.

Median Price

$4.338

Lifecycle Status

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10

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1k+

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Arrow

USA . 198 parts In-Stock

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$3.628

100+ parts

$3.567

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Mouser Electronics

USA . 85 parts In-Stock

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$7.780

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85

$7.780

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DigiKey

USA . 80 parts In-Stock

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$8.050

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$4.018

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$3.456

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80

$8.050

$4.018

$3.456

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Rochester

USA . 19,458 parts In-Stock

1+ parts

-

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$3.470

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$3.100

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$2.920

19,458

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$3.470

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$2.920

Verical

USA . 19,435 parts In-Stock

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$4.338

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$3.875

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$3.650

19,435

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$4.338

$3.875

$3.650

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Digiode

USA . 2,018 parts In-Stock

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$3.648

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$3.648

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Chip Stock

USA . 77,000 parts In-Stock

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Vyrian

USA . 9,438 parts In-Stock

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Flip Electronics

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IBS Electronics

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Corphita

USA . 573 parts In-Stock

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$3.456

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$3.456

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Corohmni

South Africa . 317 parts In-Stock

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$3.790

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Component Stockers USA

USA . 12,717 parts In-Stock

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$3.930

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$3.700

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$3.330

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$3.330

12,717

$3.930

$3.700

$3.330

$3.330

Continental Prestige Electronics

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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SupplyDigital Components

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Problanco Electronics

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Perfect Parts

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Kulean Microsystems

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Assy Fe

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UHIMA Technologies

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Overview

Upgrade your power amplifier circuits with the NJL0281DG by Onsemi. Known for their superior quality and reliability, Onsemi produces top-of-the-line Power Bipolar Junction Transistors that deliver exceptional performance. Perfect for a wide range of applications, this NPN transistor with a built-in diode offers a maximum collector current of 15A and a minimum DC current gain of 75, ensuring optimal efficiency and power dissipation. With a maximum operating temperature of 150°C and a nominal transition frequency of 30MHz, this transistor is ideal for amplifiers that require high power output. Trust Onsemi for all your amplifier needs and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body helps in providing durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

The NPN polarity type allows for easy integration into circuits and compatibility with common electronic components.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in the single configuration simplifies circuit design and can help in reducing overall component count.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor is optimized for signal amplification with high performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables easy and secure connection to circuit boards, making assembly and repairs convenient.

Maximum Power Dissipation (Abs): 180 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring stable performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting options in various applications.

Minimum DC Current Gain (hFE): 75

The minimum DC current gain of 75 ensures consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for operation in a wide range of environments without compromising performance.

Maximum Collector-Emitter Voltage: 260 V

With a high collector-emitter voltage rating, this transistor can withstand high voltage levels in circuit applications.

Transistor Element Material: SILICON

The use of silicon in the transistor element material ensures high performance, reliability, and compatibility with modern electronic systems.

Maximum Collector Current (IC): 15 A

The high maximum collector current rating allows for handling large current flows, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good electrical conductivity and resistance to oxidation, ensuring reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection in circuits, making it user-friendly.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30 MHz indicates the speed and efficiency of signal amplification in the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL0281DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL0281DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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