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NJL0302D

Onsemi

NJL0302D by Onsemi

NJL0302D by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode and high transition frequency of 30MHz. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,365 parts In-Stock

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Vyrian

USA . 876 parts In-Stock

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Problanco Electronics

Mexico . 7,160 parts In-Stock

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TANS Electronics

Latvia . 2,507 parts In-Stock

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SupplyDigital Components

Austria . 2,049 parts In-Stock

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Corphita

USA . 700 parts In-Stock

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UHIMA Technologies

Türkiye . 604 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Kulean Microsystems

USA . 34 parts In-Stock

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Overview

Discover the power and reliability of the NJL0302D by Onsemi, a top-quality Power Bipolar Junction Transistor designed for high-performance amplifier applications. With a maximum power dissipation of 180W and a maximum collector-emitter voltage of 260V, this PNP transistor offers unmatched efficiency and durability. Its single configuration with built-in diode ensures seamless integration, while the 5 terminals provide easy installation. Trust Onsemi's reputation for excellence and elevate your projects with the NJL0302D's superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it easy to handle and install.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides efficient amplification of signals in a variety of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and saves space, making this transistor a convenient choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides reliable and efficient amplification of signals.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and fitting into circuit boards or enclosures.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and secure connection, ensuring stable operation of the transistor in various conditions.

No. of Terminals: 5

Having 5 terminals allows for versatile connection options, providing flexibility in circuit design and layout.

Maximum Power Dissipation (Abs): 180 W

With a high maximum power dissipation, this transistor can handle large amounts of power, making it suitable for high-power amplifier applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy and secure mounting, enhancing the stability of the transistor in various applications.

Minimum DC Current Gain (hFE): 75

A minimum DC current gain of 75 ensures reliable and consistent amplification performance in the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliable operation in various environments.

Maximum Collector-Emitter Voltage: 260 V

The high maximum collector-emitter voltage rating allows for safe and reliable operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Being made of silicon, the transistor offers good performance characteristics and reliability, making it a durable choice for amplifier applications.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it suitable for power amplifier applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability, ensuring a reliable connection in the circuit.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit connectivity and layout, making installation and integration easier.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes during assembly.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30 MHz indicates high-speed performance, making this transistor suitable for applications requiring fast signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL0302D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL0302D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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