Loading...

NJL0281D

Onsemi

NJL0281D by Onsemi

NJL0281D by Onsemi is a NPN BJT transistor with 180W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,565

-

-

-

-

Vyrian

USA . 524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

524

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,939

-

-

-

-

SupplyDigital Components

Austria . 4,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,980

-

-

-

-

TANS Electronics

Latvia . 3,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,010

-

-

-

-

Corphita

USA . 1,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,117

-

-

-

-

Problanco Electronics

Mexico . 1,032 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,032

-

-

-

-

Corohmni

South Africa . 371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

371

-

-

-

-

UHIMA Technologies

Türkiye . 370 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

370

-

-

-

-

Overview

Power up your amplifiers with the NJL0281D by Onsemi, a top-quality NPN Power BJT transistor with a built-in diode for enhanced performance. Manufactured by Onsemi, known for their excellence in semiconductor technology, this transistor is perfect for amplifier applications. With a maximum power dissipation of 180W and a maximum collector-emitter voltage of 260V, this transistor offers unmatched reliability and efficiency. Upgrade your amplifiers today with the NJL0281D and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures good durability and heat resistance for reliable performance.

Polarity or Channel Type: NPN

NPN configuration allows for high efficiency amplification of signals.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode improves circuit efficiency and simplifies design.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and efficient use of space on a circuit board.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections.

Maximum Power Dissipation (Abs): 180 W

High power dissipation capability allows for handling of larger electrical loads.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and easy installation.

Minimum DC Current Gain (hFE): 75

High DC current gain ensures efficient signal amplification.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a variety of environments.

Maximum Collector-Emitter Voltage: 260 V

High collector-emitter voltage rating allows for handling of high voltage applications.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling of larger electrical currents.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and electrical conductivity.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures stable solder connections.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for fast switching and amplification of signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL0281D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL0281D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3