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MJW0302AG

Onsemi

MJW0302AG by Onsemi

The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 43,000 parts In-Stock

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Vyrian

USA . 10,328 parts In-Stock

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Digiode

USA . 968 parts In-Stock

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968

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Microchip USA

USA . 333 parts In-Stock

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$4.615

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333

$4.615

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AZTECH Wire

Italy . 961 parts In-Stock

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$20.820

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961

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Problanco Electronics

Mexico . 6,599 parts In-Stock

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SupplyDigital Components

Austria . 5,815 parts In-Stock

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Kulean Microsystems

USA . 5,201 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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TANS Electronics

Latvia . 1,849 parts In-Stock

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Continental Prestige Electronics

USA . 927 parts In-Stock

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$0.665

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927

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$0.665

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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Corphita

USA . 557 parts In-Stock

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Corohmni

South Africa . 424 parts In-Stock

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Overview

Elevate your amplifier designs with the MJW0302AG by Onsemi. Crafted with precision and expertise, this PNP Power BJT transistor offers unrivaled performance and reliability. Ideal for a wide range of applications, from audio amplifiers to power supplies, this single configuration transistor delivers exceptional quality and efficiency. Experience the benefits of its high DC current gain, maximum collector-emitter voltage of 260V, and maximum collector current of 15A. Trust Onsemi for cutting-edge technology and unmatched value in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy package provides durability and protection to the transistor, making it suitable for a variety of applications and environments.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration with other PNP components, enhancing compatibility and flexibility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making the transistor easy to use for amplification purposes.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

Rectangular package shape is compact and space-saving, suitable for applications where size constraints are a consideration.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy and secure soldering onto PCBs, ensuring reliable connections in electronic circuits.

No. of Terminals: 3

Three terminals provide straightforward connections and enable simple integration into circuit designs.

Minimum DC Current Gain (hFE): 75

High minimum DC current gain ensures stable and reliable amplification of signals, making the transistor suitable for various applications.

Maximum Collector-Emitter Voltage: 260 V

High maximum collector-emitter voltage rating allows for operation in circuits with higher voltages, offering versatility in amplifier applications.

Transistor Element Material: SILICON

Silicon-based transistor element material provides high performance, efficiency, and reliability in amplification tasks.

Maximum Collector Current (IC): 15 A

High maximum collector current rating allows for handling of large currents, making the transistor suitable for power applications.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good solderability and corrosion resistance, enhancing the lifespan and performance of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation, reducing the complexity of circuit design and assembly.

Case Connection: COLLECTOR

Collector case connection offers efficient heat dissipation, ensuring the transistor operates at optimal temperatures for reliable performance.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW0302AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW0302AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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