Loading...

MJW0281AG

Onsemi

MJW0281AG by Onsemi

The Onsemi MJW0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 55,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55,000

-

-

-

-

Vyrian

USA . 4,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,610

-

-

-

-

Digiode

USA . 1,329 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,329

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 644 parts In-Stock

1+ parts

$17.700

100+ parts

-

1k+ parts

-

10k+ parts

-

644

$17.700

-

-

-

TANS Electronics

Latvia . 7,574 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,574

-

-

-

-

SupplyDigital Components

Austria . 5,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,745

-

-

-

-

Kulean Microsystems

USA . 4,303 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,303

-

-

-

-

Problanco Electronics

Mexico . 2,255 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,255

-

-

-

-

UHIMA Technologies

Türkiye . 808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

808

-

-

-

-

Corphita

USA . 543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

543

-

-

-

-

Corohmni

South Africa . 412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

412

-

-

-

-

Overview

Discover the power and reliability of the MJW0281AG by Onsemi, a top-quality Power Bipolar Junction Transistor designed for amplifier applications. With a single NPN configuration and a maximum collector-emitter voltage of 260V, this transistor offers exceptional performance and durability. Manufactured by Onsemi, a trusted industry leader known for their cutting-edge technology, this product guarantees superior quality and long-lasting functionality. Whether you're a hobbyist or a professional looking to enhance your projects, the MJW0281AG provides value, efficiency, and unmatched performance. Experience the difference with Onsemi's innovative transistor technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in electronic devices or circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making it easy to solder the transistor onto a circuit board.

No. of Terminals: 3

3 terminals allow for easy connection and integration into amplifier circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and secure attachment to a surface or heat sink.

Minimum DC Current Gain (hFE): 75

High minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Collector-Emitter Voltage: 260 V

High maximum collector-emitter voltage allows for versatile usage in different amplifier circuits.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability for the transistor element.

Maximum Collector Current (IC): 15 A

High maximum collector current allows for applications that require high power amplification.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good conductivity and corrosion resistance for stable connections.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and makes the transistor easy to use in circuits.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and helps maintain the transistor's performance.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency allows for good high-frequency performance in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW0281AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW0281AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3