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NTE2349

Nte Electronics

NTE2349 by Nte Electronics

NTE2349 by Nte Electronics is a NPN Power BJT with 300W power dissipation, 120V max collector-emitter voltage, and 50A max collector current. Ideal for high-power applications requiring Darlington configuration with built-in diode and resistor in a round package shape.

Median Price

$17.820

Lifecycle Status

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9

In-Stock Inventory

1k+

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Bristol Electronics

USA . 2 parts In-Stock

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$12.000

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TME

Poland . 11 parts In-Stock

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$17.700

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DigiKey Marketplace

USA . 370 parts In-Stock

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$17.940

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$14.890

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$17.940

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Ace Electronics

USA . 5 parts In-Stock

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$22.430

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Vyrian

USA . 4,870 parts In-Stock

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Electronic Expediters

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Nova Conductors

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American Microsemiconductor Inc.

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Electronic Supply

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AZTECH Wire

Italy . 1,132 parts In-Stock

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$10.680

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Microchip USA

USA . 267 parts In-Stock

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$50.232

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Netroflash

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Overview

Upgrade your power performance with the NTE2349 by Nte Electronics. This high-quality Power Bipolar Junction Transistor (BJT) offers customers unparalleled reliability and efficiency, making it ideal for a wide range of applications. With a maximum power dissipation of 300W and a minimum DC current gain of 400, this NPN transistor is designed to deliver exceptional results. Say goodbye to subpar components and experience the value and benefits that only NTE Electronics can provide. Choose the NTE2349 for all your power needs and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: METAL

Provides good thermal conductivity and mechanical stability, improving overall performance and reliability.

Polarity or Channel Type: NPN

Commonly used and versatile for various circuit applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated components save space and simplify circuit design.

Package Shape: ROUND

Allows for easy mounting and installation in various applications.

Maximum Power Dissipation (Abs): 300 W

Higher power dissipation capability for handling more demanding tasks.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting for industrial applications.

Minimum DC Current Gain (hFE): 400

High current gain ensures efficient amplification of signals.

Maximum Collector-Emitter Voltage: 120 V

Suitable for applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 50 A

Capable of handling high levels of current for heavy-duty applications.

Transistor Element Material: SILICON

Commonly used material with good electrical properties for reliable performance.

Terminal Position: BOTTOM

Allows for easy and secure connections in circuit layouts.

Case Connection: COLLECTOR

Provides a convenient connection point for the collector terminal.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NTE2349 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nte Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

300 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

NTE2349 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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