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NTE2679

Nte Electronics

NTE2679 by Nte Electronics

NTE2679 by Nte Electronics is a NPN BJT transistor with VCEsat of 2.5V, hFE of 5, and IC of 6A. Ideal for amplifier applications, it has a max power dissipation of 30W and can operate at temperatures up to 150°C. The transistor features a built-in diode in a rectangular package with through-hole terminals.

Median Price

$2.730

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,403 parts In-Stock

1+ parts

$2.730

100+ parts

$2.270

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1,403

$2.730

$2.270

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Distributors (In-Stock)

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Nova Conductors

Japan . 38 parts In-Stock

1+ parts

$1.761

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38

$1.761

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DigiKey Marketplace

USA . 1,416 parts In-Stock

1+ parts

$2.730

100+ parts

$2.270

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1,416

$2.730

$2.270

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Vyrian

USA . 1,220 parts In-Stock

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1,220

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American Microsemiconductor Inc.

USA . 883 parts In-Stock

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883

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,158 parts In-Stock

1+ parts

$1.761

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3,158

$1.761

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.761

100+ parts

$1.726

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1,000

$1.761

$1.726

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Continental Prestige Electronics

USA . 308 parts In-Stock

1+ parts

$1.761

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$1.726

308

$1.761

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$1.726

Microchip USA

USA . 8,088 parts In-Stock

1+ parts

$17.745

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8,088

$17.745

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Overview

Discover the NTE2679 by Nte Electronics, a high-quality Power Bipolar Junction Transistor perfect for amplifier applications. With a maximum power dissipation of 30W and a collector-emitter voltage of 1500V, this NPN transistor offers reliable performance and efficiency. The single configuration with a built-in diode ensures ease of use, while the plastic/epoxy package body material guarantees durability. Upgrade your electronics projects with the NTE2679 and experience the benefits of superior quality and seamless functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits due to its high input impedance and low output impedance.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with an integrated diode for protection and easy circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, making it ideal for audio and other signal processing applications.

Maximum VCEsat: 2.5 V

Low saturation voltage helps reduce power dissipation and improve efficiency in amplifier circuits.

Maximum Power Dissipation (Abs): 30 W

Can handle high power levels without overheating, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 1500 V

Allows for high voltage operation, making it versatile for various power amplification tasks.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency enables the transistor to amplify signals accurately and efficiently.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NTE2679 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nte Electronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

1500 V

Minimum DC Current Gain (hFE):

5

Maximum Fall Time (tf):

500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

5500 ns

Maximum VCEsat:

2.5 V

Trade Compliance

NTE2679 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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