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D44H11FP

STMicroelectronics

D44H11FP by STMicroelectronics

D44H11FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 36W, a collector-emitter voltage of 80V, and operates at up to 150 °C. Ideal for high-performance electronic circuits requiring reliable control.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,458 parts In-Stock

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6,458

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Digiode

USA . 4,376 parts In-Stock

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Anansix

USA . 912 parts In-Stock

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Bristol Electronics

USA . 72 parts In-Stock

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IDEA Electronic Components Group

UK . 1,991 parts In-Stock

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$0.941

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$0.847

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1,991

$0.941

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$0.847

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MKK Technologies

India . 805 parts In-Stock

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$1.770

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805

$1.770

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DigiPath Technology Company

USA . 805 parts In-Stock

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$1.770

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805

$1.770

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AZTECH Wire

Italy . 802 parts In-Stock

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$9.110

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802

$9.110

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Lixinc

USA . 4,896 parts In-Stock

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Corphita

USA . 3,840 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,597 parts In-Stock

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Parana Technologies

USA . 1,116 parts In-Stock

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Perfect Parts

USA . 724 parts In-Stock

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Native Components

USA . 647 parts In-Stock

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Metaverse IC Inc.

Canada . 628 parts In-Stock

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Northwest PG Solutions

USA . 570 parts In-Stock

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Kepictronics

USA . 528 parts In-Stock

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Overview

Experience unparalleled reliability and performance with the D44H11FP from STMicroelectronics, a leader in innovative semiconductor solutions. This NPN power transistor excels in switching applications, providing robust efficiency and durability to elevate your designs. With a high power dissipation capability and a resilient operating temperature, it’s perfect for various industrial and consumer applications. Choose D44H11FP for a dependable solution that enhances your project's value and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in digital and analog applications, making this product versatile for various circuit designs.

Configuration: SINGLE

The single configuration allows for straightforward integration into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed for switching applications, this transistor effectively handles on/off control operations, enhancing system efficiencies.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, allowing for easier placement on PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are ideal for prototyping and assembly.

No. of Terminals: 3

Having three terminals allows for a simple and effective connection, suitable for various circuit configurations.

Maximum Power Dissipation (Abs): 36 W

With a maximum power dissipation of 36 W, this transistor can handle significant power levels, making it reliable in high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides stable mounting options, ensuring secure integration into larger systems.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures effective amplification, enabling the transistor to drive heavier loads.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C provides versatility in demanding environments, enhancing overall reliability.

Maximum Collector-Emitter Voltage: 80 V

An 80 V maximum collector-emitter voltage allows this transistor to withstand significant voltage levels, suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material allows for efficient performance and stability across various temperature ranges.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A supports high current applications, making this transistor suitable for various power control tasks.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and improves corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position allows for straightforward connectivity in circuit designs, enhancing ease of use.

Case Connection: ISOLATED

An isolated case connection reduces the risk of short circuits, increasing safety and reliability in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D44H11FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

D44H11FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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