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NJL4302DG

Onsemi

NJL4302DG by Onsemi

NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.

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Italy . 1,039 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

Latvia . 3,285 parts In-Stock

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Corphita

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Problanco Electronics

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Overview

Looking for a reliable and high-quality Power BJT? Look no further than the NJL4302DG by Onsemi. Known for their superior manufacturing standards, Onsemi delivers top-notch products that exceed expectations. The NJL4302DG is perfect for amplifier applications, boasting a maximum power dissipation of 200W and a maximum collector-emitter voltage of 350V. With a built-in diode and a peak reflow temperature of 260 °C, this PNP transistor offers exceptional performance and reliability. Trust Onsemi to provide you with the best in power transistors for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor components, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this product suitable for such applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient circuit design and can protect against reverse polarity, enhancing the performance of the transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high gain and low noise operation for audio and signal amplification.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards, optimizing space usage and assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide strong mechanical connections, ensuring stability and reliability in circuit connections.

No. of Terminals: 5

Having 5 terminals allows for versatile connection options, enabling more complex circuit designs and functionalities.

Maximum Power Dissipation (Abs): 200 W

High power dissipation rating allows the transistor to handle large amounts of power without overheating, ensuring safe and reliable operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and heat dissipation, ideal for high-power applications where cooling is essential.

Minimum DC Current Gain (hFE): 10

Having a minimum DC current gain of 10 ensures stable and consistent amplification of input signals, enhancing overall performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without compromising performance, suitable for harsh environments.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating allows the transistor to handle higher voltage levels, making it versatile for various circuit applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and high performance, ensuring long-lasting functionality of the transistor.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle large current loads, making it suitable for power applications where high current is required.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections and preventing oxidation over time.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces the risk of errors during assembly, making it easy to integrate into circuit designs.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reflow soldering processes, ensuring secure and reliable solder joints for the terminal connections.

Nominal Transition Frequency (fT): 35 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, making this transistor suitable for RF and high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL4302DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL4302DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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