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NJL4302D

Onsemi

NJL4302D by Onsemi

NJL4302D by Onsemi is a PNP BJT transistor with 5 terminals, 15A max collector current, and 200W power dissipation. Ideal for amplifier applications due to its built-in diode and high transition frequency of 35MHz. Operates at up to 150 °C with a max voltage of 350V.

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TANS Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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Corohmni

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UHIMA Technologies

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Overview

Discover the power of the NJL4302D by Onsemi, a top-of-the-line Power BJT transistor that offers unparalleled quality and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 200W and a maximum collector-emitter voltage of 350V, this transistor provides exceptional performance and durability. Its built-in diode and high DC current gain make it a versatile choice for a wide range of projects. Upgrade your electronics with the NJL4302D and experience the difference that superior quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers durability and provides protection to the internal components of the transistor, making it a reliable choice for long-term use.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration with other components in PNP transistor circuits, making it suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can be useful for certain amplifier configurations, making this product versatile and convenient to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides reliable amplification of signals with low distortion, making it ideal for audio or radio frequency amplifiers.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into circuit boards or heat sinks, providing efficient thermal management for the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connection points for soldering components, ensuring stable electrical connections and easy assembly in electronic circuits.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation of 200W, this transistor can handle high power levels without risking damage, making it suitable for demanding amplifier applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and allows for easy mounting on heat sinks or metal enclosures, enhancing thermal performance and reliability.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures efficient amplification of input signals with relatively low base current, improving overall performance and signal fidelity.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without losing performance, making it reliable in harsh operating conditions.

Maximum Collector-Emitter Voltage: 350 V

High maximum collector-emitter voltage rating of 350V allows for efficient handling of high voltage signals, making this transistor suitable for various amplifier applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability, with excellent thermal conductivity and low leakage current, making this transistor ideal for demanding amplifier circuits.

Maximum Collector Current (IC): 15 A

High maximum collector current of 15A enables the transistor to handle high current loads with ease, making it suitable for power amplifier applications that require substantial current output.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity, ensuring secure connections and reliable operation in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, allowing for easy integration into amplifier circuits and reducing the risk of wiring errors or misconnections.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C ensures proper soldering of the terminals during assembly, enhancing the mechanical and electrical reliability of the transistor.

Nominal Transition Frequency (fT): 35 MHz

High nominal transition frequency of 35MHz allows for efficient amplification of high-frequency signals, making this transistor suitable for radio frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL4302D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL4302D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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