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NJL4281D

Onsemi

NJL4281D by Onsemi

NJL4281D by Onsemi is a NPN BJT transistor with 200W power dissipation, 350V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150 °C, making it suitable for high-power amplification needs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,048 parts In-Stock

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Vyrian

USA . 444 parts In-Stock

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Problanco Electronics

Mexico . 6,497 parts In-Stock

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SupplyDigital Components

Austria . 6,082 parts In-Stock

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Kulean Microsystems

USA . 3,420 parts In-Stock

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UHIMA Technologies

Türkiye . 704 parts In-Stock

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Corphita

USA . 648 parts In-Stock

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Corohmni

South Africa . 499 parts In-Stock

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499

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TANS Electronics

Latvia . 269 parts In-Stock

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Overview

Elevate your amplifier designs with the NJL4281D by Onsemi, a top-tier Power BJT transistor that guarantees superior performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor boasts a built-in diode, making it ideal for various amplifier applications. With a maximum power dissipation of 200W and a collector-emitter voltage of 350V, this transistor delivers outstanding results while ensuring longevity. Trust in Onsemi's expertise and invest in the NJL4281D for unmatched quality and value in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good thermal and electrical insulation, making the transistor reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making this product suitable for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and protects the transistor from reverse current flow, enhancing the overall performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimal amplification of signals with low distortion.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and efficient use of space on the circuit board.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation, this transistor can handle significant amounts of power without overheating, providing reliable performance under heavy loads.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures sufficient signal amplification and stability in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures, ensuring reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating provides a wide voltage tolerance, making this transistor suitable for applications requiring high voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and excellent thermal stability, making this product a reliable choice for amplifier circuits.

Maximum Collector Current (IC): 15 A

With a high maximum collector current rating, this transistor can handle substantial current loads, ensuring stable operation in power amplifier applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability, making it easy to solder this transistor onto the circuit board during assembly.

Nominal Transition Frequency (fT): 35 MHz

The high nominal transition frequency indicates fast switching capabilities, making this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL4281D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL4281D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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