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MD2009DFP

STMicroelectronics

MD2009DFP by STMicroelectronics

MD2009DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

$1.401

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 860 parts In-Stock

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$1.012

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860

$1.012

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Chip1Stop

Japan . 860 parts In-Stock

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$1.790

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860

$1.790

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Verical

USA . 860 parts In-Stock

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860

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Distributors (In-Stock)

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Digiode

USA . 2,012 parts In-Stock

1+ parts

$0.961

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2,012

$0.961

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Vyrian

USA . 3,120 parts In-Stock

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3,120

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Anansix

USA . 1,420 parts In-Stock

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1,420

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Bristol Electronics

USA . 950 parts In-Stock

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950

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Dan-Mar Components

USA . 950 parts In-Stock

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950

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Distributors (Availability)

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Corphita

USA . 2,046 parts In-Stock

1+ parts

$0.911

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2,046

$0.911

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IDEA Electronic Components Group

UK . 1,745 parts In-Stock

1+ parts

$1.743

100+ parts

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$1.569

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1,745

$1.743

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$1.569

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MKK Technologies

India . 129 parts In-Stock

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$3.278

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129

$3.278

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DigiPath Technology Company

USA . 129 parts In-Stock

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$3.278

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129

$3.278

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AZTECH Wire

Italy . 672 parts In-Stock

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$20.640

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672

$20.640

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Alle Elektronik GmbH

Germany . 3,226 parts In-Stock

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3,226

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Perfect Parts

USA . 1,057 parts In-Stock

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1,057

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Parana Technologies

USA . 921 parts In-Stock

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$2.084

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921

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$2.084

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Overview

Unlock unparalleled performance with the MD2009DFP from STMicroelectronics, a leader in semiconductor innovation. This robust NPN power transistor is engineered for reliable switching applications, delivering exceptional efficiency and durability. With a maximum power dissipation of 40W and an impressive collector-emitter voltage of 700V, it’s designed to meet the demands of various industries. Choose MD2009DFP for quality you can trust and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material offers excellent insulation and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient current control and is widely used in switching applications, enhancing versatility.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies the design by integrating necessary components, which reduces layout complexity and overall size.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor ensures fast operation and reliability in power management systems.

Package Shape: RECTANGULAR

The rectangular shape provides easy mounting options and better space utilization in electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal design offers strong mechanical support and is ideal for high-power applications.

No. of Terminals: 3

Having three terminals allows for simple connections and flexibility in circuit design.

Maximum Power Dissipation (Abs): 40 W

A high power dissipation rating ensures reliable performance even under demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances stability and heat dissipation, making it ideal for industrial applications.

Minimum DC Current Gain (hFE): 5

A minimum gain specification ensures effective switching capabilities with adequate amplification for various applications.

Maximum Operating Temperature: 150 °C

This high operating temperature rating allows the transistor to function reliably in extreme environments.

Maximum Collector-Emitter Voltage: 700 V

The high voltage rating supports a wide range of applications, including high-voltage circuits.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, providing good efficiency and thermal performance.

Maximum Collector Current (IC): 10 A

With a high current rating, this transistor is capable of handling significant loads in power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and prevents oxidation, enhancing connectivity over time.

Terminal Position: SINGLE

A single terminal position simplifies PCB layout and reduces assembly time.

Case Connection: ISOLATED

Isolation ensures safety and minimizes interference, making it suitable for sensitive electronic devices.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that this transistor meets rigorous safety and performance standards, ensuring reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD2009DFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MD2009DFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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