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MD2001FX

STMicroelectronics

MD2001FX by STMicroelectronics

MD2001FX by STMicroelectronics is a NPN BJT transistor with 700V VCE, 12A IC, and 58W Ptot. Ideal for amplifier applications, it has a min hFE of 4.5 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$3.240

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 407 parts In-Stock

1+ parts

$3.000

100+ parts

$1.110

1k+ parts

-

10k+ parts

-

407

$3.000

$1.110

-

-

DigiKey

USA . 4,027 parts In-Stock

1+ parts

$3.480

100+ parts

$1.895

1k+ parts

$1.287

10k+ parts

$1.122

4,027

$3.480

$1.895

$1.287

$1.122

Mouser Electronics

USA . 4,674 parts In-Stock

1+ parts

$3.690

100+ parts

$1.420

1k+ parts

$1.250

10k+ parts

$1.120

4,674

$3.690

$1.420

$1.250

$1.120

Element14

Singapore . 407 parts In-Stock

1+ parts

$5.040

100+ parts

$1.880

1k+ parts

$1.630

10k+ parts

$1.600

407

$5.040

$1.880

$1.630

$1.600

Arrow

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.238

10k+ parts

-

4,200

-

-

$1.238

-

Verical

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.238

10k+ parts

-

4,200

-

-

$1.238

-

Avnet

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$1.587

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$1.587

-

-

-

Digiode

USA . 1,174 parts In-Stock

1+ parts

$2.004

100+ parts

-

1k+ parts

-

10k+ parts

-

1,174

$2.004

-

-

-

Vyrian

USA . 3,456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,456

-

-

-

-

Anansix

USA . 2,542 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,542

-

-

-

-

Chip Stock

USA . 317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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317

-

-

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-

ComSIT Distribution GmbH

Germany . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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300

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,289 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

3,289

$0.620

-

-

-

Semicontronic

India . 3,058 parts In-Stock

1+ parts

$0.620

100+ parts

$0.604

1k+ parts

$0.601

10k+ parts

-

3,058

$0.620

$0.604

$0.601

-

IDEA Electronic Components Group

UK . 1,424 parts In-Stock

1+ parts

$0.946

100+ parts

-

1k+ parts

$0.851

10k+ parts

-

1,424

$0.946

-

$0.851

-

Aztec Data Supply Inc.

USA . 4,938 parts In-Stock

1+ parts

$0.960

100+ parts

-

1k+ parts

-

10k+ parts

-

4,938

$0.960

-

-

-

Corohmni

South Africa . 726 parts In-Stock

1+ parts

$1.118

100+ parts

-

1k+ parts

-

10k+ parts

-

726

$1.118

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.269

100+ parts

$1.155

1k+ parts

$1.041

10k+ parts

-

500

$1.269

$1.155

$1.041

-

Continental Prestige Electronics

USA . 6,452 parts In-Stock

1+ parts

$1.587

100+ parts

-

1k+ parts

-

10k+ parts

$1.556

6,452

$1.587

-

-

$1.556

Argo Parts USA

USA . 1,305 parts In-Stock

1+ parts

$1.587

100+ parts

-

1k+ parts

-

10k+ parts

-

1,305

$1.587

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.587

100+ parts

$1.556

1k+ parts

-

10k+ parts

-

1,000

$1.587

$1.556

-

-

MKK Technologies

India . 332 parts In-Stock

1+ parts

$1.778

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$1.778

-

-

-

DigiPath Technology Company

USA . 332 parts In-Stock

1+ parts

$1.778

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$1.778

-

-

-

Corphita

USA . 4,446 parts In-Stock

1+ parts

$1.899

100+ parts

-

1k+ parts

-

10k+ parts

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4,446

$1.899

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Microchip USA

USA . 7,067 parts In-Stock

1+ parts

$18.265

100+ parts

-

1k+ parts

-

10k+ parts

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7,067

$18.265

-

-

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Lixinc

USA . 14,380 parts In-Stock

1+ parts

-

100+ parts

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14,380

-

-

-

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iodParts Technologies Inc.

India . 5,421 parts In-Stock

1+ parts

-

100+ parts

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5,421

-

-

-

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Parana Technologies

USA . 27 parts In-Stock

1+ parts

-

100+ parts

$1.131

1k+ parts

-

10k+ parts

-

27

-

$1.131

-

-

Overview

Elevate your electronic projects with the MD2001FX Power Bipolar Junction Transistor by STMicroelectronics. Known for their high-quality components, STMicroelectronics delivers reliable performance and durability in every product. Ideal for amplifier applications, this NPN transistor offers a maximum power dissipation of 58W and a maximum collector-emitter voltage of 700V. With a minimum DC current gain of 4.5, the MD2001FX provides customers with exceptional value and efficiency for their designs. Trust STMicroelectronics to meet your electronic component needs with top-notch products like the MD2001FX.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high-quality signal processing and output.

Package Shape: RECTANGULAR

Offers easy mounting and installation in circuit boards, facilitating the manufacturing process.

Terminal Form: THROUGH-HOLE

Allows for secure and reliable connections to the circuit board, reducing the risk of disconnection or failure.

Maximum Power Dissipation (Abs): 58 W

Capable of handling high power levels without overheating, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and secure attachment to other components or heat sinks, enhancing thermal management.

Minimum DC Current Gain (hFE): 4.5

Ensures stable and consistent amplification performance, improving the overall efficiency of the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for use in environments with elevated heat levels.

Maximum Collector-Emitter Voltage: 700 V

Can handle high voltage levels, making it versatile for a wide range of applications that require voltage amplification.

Transistor Element Material: SILICON

Provides high reliability and performance, as silicon is a common and proven material for transistor construction.

Maximum Collector Current (IC): 12 A

Capable of handling high current levels, making it suitable for applications that require high power output.

Terminal Position: SINGLE

Simplifies circuit connections and layout, improving overall circuit design and integration.

Case Connection: ISOLATED

Prevents electrical interference and short circuits, ensuring stable and efficient operation in various electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD2001FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

4.5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MD2001FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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