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MJD117RLG

Onsemi

MJD117RLG by Onsemi

MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 15,000 parts In-Stock

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Vyrian

USA . 4,199 parts In-Stock

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Digiode

USA . 1,913 parts In-Stock

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1,913

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Speed Components Ltd

Israel . 1,500 parts In-Stock

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1,500

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.340

100+ parts

$1.219

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$1.099

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270

$1.340

$1.219

$1.099

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AZTECH Wire

Italy . 409 parts In-Stock

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$9.446

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409

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Ampacity Inc.

Singapore . 604 parts In-Stock

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$52.050

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604

$52.050

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Component Stockers USA

USA . 550 parts In-Stock

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$99.990

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550

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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TANS Electronics

Latvia . 7,412 parts In-Stock

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Kulean Microsystems

USA . 5,433 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

USA . 4,665 parts In-Stock

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Corphita

USA . 2,191 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 819 parts In-Stock

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Continental Prestige Electronics

USA . 527 parts In-Stock

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Problanco Electronics

Mexico . 121 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the power and reliability of the MJD117RLG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that meet the highest standards. The MJD117RLG is a Power Bipolar Junction Transistor (BJT) with a PNP polarity and Darlington configuration. Designed for switching applications, this transistor offers exceptional performance and efficiency. With its compact rectangular shape and gull wing terminals, it's perfect for surface mount installations. With a maximum collector-emitter voltage of 100V and a maximum collector current of 2A, this transistor provides the power you need. Trust Onsemi and experience the value, benefits, and advantages that the MJD117RLG brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the product lightweight and durable, ideal for applications where weight and robustness are important factors.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors, making it versatile for a variety of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making the product efficient and cost-effective.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable performance and efficient operation in various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, enhancing ease of assembly and reliability of the product.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability ensures the product can handle high power loads without overheating, increasing its durability and reliability.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient amplification of signals, making the product suitable for applications requiring high signal amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various temperature conditions, making it suitable for a range of applications.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides protection against voltage spikes and ensures safe operation in high-voltage applications.

Maximum Collector Current (IC): 2 A

High collector current rating allows for the handling of high current loads, making the product suitable for applications requiring high current switching.

Nominal Transition Frequency (fT): 25 MHz

High transition frequency ensures fast switching speeds, making the product ideal for high-frequency switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD117RLG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD117RLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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