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NJW0281G

Onsemi

NJW0281G by Onsemi

NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.

Median Price

$3.620

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 552 parts In-Stock

1+ parts

$3.620

100+ parts

$1.680

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$1.330

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552

$3.620

$1.680

$1.330

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Newark

USA . 208 parts In-Stock

1+ parts

$4.160

100+ parts

$2.300

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$1.870

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208

$4.160

$2.300

$1.870

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Mouser Electronics

USA . 1,572 parts In-Stock

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$4.460

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1,572

$4.460

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Element14

Singapore . 552 parts In-Stock

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$5.740

100+ parts

$2.170

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$2.080

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552

$5.740

$2.170

$2.080

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DigiKey

USA . 2,400 parts In-Stock

1+ parts

$6.900

100+ parts

$2.484

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$1.478

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$1.256

2,400

$6.900

$2.484

$1.478

$1.256

Avnet

USA . 960 parts In-Stock

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$1.375

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$1.325

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960

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$1.375

$1.325

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Master Electronics

USA . 300 parts In-Stock

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$2.520

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$1.810

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$1.770

300

-

$2.520

$1.810

$1.770

Verical

USA . 300 parts In-Stock

1+ parts

-

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$2.965

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$2.141

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300

-

$2.965

$2.141

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Chip1Stop

Japan . 180 parts In-Stock

1+ parts

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$2.410

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$1.740

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180

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$2.410

$1.740

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Distrelec

Netherlands . 20 parts In-Stock

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Digiode

USA . 494 parts In-Stock

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$1.454

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$1.454

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Nova Conductors

Japan . 450 parts In-Stock

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$1.618

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450

$1.618

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TME

Poland . 336 parts In-Stock

1+ parts

$3.810

100+ parts

$2.140

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$2.000

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336

$3.810

$2.140

$2.000

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Chip Stock

USA . 147,500 parts In-Stock

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Vyrian

USA . 7,919 parts In-Stock

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IBS Electronics

USA . 1,239 parts In-Stock

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$2.917

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$2.889

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1,239

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$2.917

$2.889

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Cyclops Electronics Ltd

UK . 353 parts In-Stock

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353

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NAC Semi

USA . 300 parts In-Stock

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$2.310

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$2.140

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$2.310

$2.140

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J2 Sourcing AB

Sweden . 74 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 683 parts In-Stock

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$1.300

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683

$1.300

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Corphita

USA . 502 parts In-Stock

1+ parts

$1.377

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502

$1.377

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Corohmni

South Africa . 498 parts In-Stock

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$1.530

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498

$1.530

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.586

100+ parts

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$1.522

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500

$1.586

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$1.522

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Continental Prestige Electronics

USA . 5,270 parts In-Stock

1+ parts

$1.618

100+ parts

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$1.586

5,270

$1.618

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$1.586

Argo Parts USA

USA . 3,031 parts In-Stock

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$1.618

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3,031

$1.618

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Microchip USA

USA . 5,539 parts In-Stock

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$20.085

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5,539

$20.085

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RC Electronics

USA . 45,242 parts In-Stock

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$1.500

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$1.370

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$1.330

45,242

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Kepictronics

USA . 42,046 parts In-Stock

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Lixinc

USA . 12,818 parts In-Stock

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Kulean Microsystems

USA . 8,261 parts In-Stock

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TANS Electronics

Latvia . 5,914 parts In-Stock

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SupplyDigital Components

Austria . 4,995 parts In-Stock

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Problanco Electronics

Mexico . 1,472 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 960 parts In-Stock

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960

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Infinite Electronics LLP (Excess)

. 601 parts In-Stock

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601

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Futuretech Components

Singapore . 560 parts In-Stock

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560

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Eastek

USA . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 205 parts In-Stock

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iodParts Technologies Inc.

India . 175 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 18 parts In-Stock

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Overview

Looking for a reliable Power BJT? The Onsemi NJW0281G is the perfect choice! Manufactured by Onsemi, known for their top-notch quality, this NPN transistor is ideal for amplifier applications. With a maximum power dissipation of 150W and a collector-emitter voltage of 250V, this transistor offers excellent performance and durability. Whether you're working on audio amplifiers or power supplies, the NJW0281G provides the value and reliability you need to bring your projects to life. Choose Onsemi for superior quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplify circuit design and reduce complexity by using a single transistor in the configuration.

Maximum Power Dissipation (Abs): 150 W

Allows the transistor to handle high power levels without damage, suitable for applications requiring high power amplification.

Maximum Collector-Emitter Voltage: 250 V

Capable of handling high voltage levels, making it versatile for various voltage requirements in amplification circuits.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, suitable for applications requiring high current amplification.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making it suitable for applications where frequency response is critical.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJW0281G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJW0281G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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