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STWH13009

STMicroelectronics

STWH13009 by STMicroelectronics

STWH13009 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-power circuits with through-hole mounting.

Median Price

$36.750

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 10 parts In-Stock

1+ parts

$36.750

100+ parts

-

1k+ parts

-

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10

$36.750

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-

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Digiode

USA . 3,709 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,709

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Vyrian

USA . 1,942 parts In-Stock

1+ parts

-

100+ parts

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1,942

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-

-

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Anansix

USA . 1,864 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,864

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.358

100+ parts

$0.326

1k+ parts

$0.294

10k+ parts

-

2,000

$0.358

$0.326

$0.294

-

IDEA Electronic Components Group

UK . 1,007 parts In-Stock

1+ parts

$1.495

100+ parts

-

1k+ parts

$1.346

10k+ parts

-

1,007

$1.495

-

$1.346

-

MKK Technologies

India . 801 parts In-Stock

1+ parts

$2.811

100+ parts

-

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-

10k+ parts

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801

$2.811

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-

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DigiPath Technology Company

USA . 801 parts In-Stock

1+ parts

$2.811

100+ parts

-

1k+ parts

-

10k+ parts

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801

$2.811

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-

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AZTECH Wire

Italy . 276 parts In-Stock

1+ parts

$20.210

100+ parts

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276

$20.210

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Alle Elektronik GmbH

Germany . 2,262 parts In-Stock

1+ parts

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2,262

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Parana Technologies

USA . 1,925 parts In-Stock

1+ parts

-

100+ parts

$1.788

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1,925

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$1.788

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Corphita

USA . 590 parts In-Stock

1+ parts

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590

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Overview

Unlock the potential of your projects with the STWH13009 from STMicroelectronics! Renowned for their commitment to quality and innovation, STMicroelectronics delivers a powerful NPN transistor designed for seamless switching applications. With robust performance, including high power dissipation and reliable temperature handling, this BJT is ideal for diverse applications. Experience enhanced efficiency and durability that elevate your designs while enjoying peace of mind from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures reliability and protection against environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for a wide range of switching applications, providing efficient performance in electronic circuits.

Configuration: SINGLE

The single configuration allows for simpler circuit designs and reduces space requirements on PCBs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control high loads with minimal power loss.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and layout within electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures stable mechanical and electrical connections, suitable for prototyping and manufacturing.

No. of Terminals: 3

Having three terminals makes this transistor versatile and easy to use for a variety of configurations.

Maximum Power Dissipation (Abs): 125 W

A high maximum power dissipation rating ensures that the transistor can handle substantial power loads without overheating, enhancing its reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows secure mounting and efficient heat dissipation, ideal for high-power applications.

Minimum DC Current Gain (hFE): 11

A minimum DC current gain of 11 signifies decent amplification capabilities, making it suitable for various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating allows for safe operation in high-voltage applications, expanding its versatility.

Transistor Element Material: SILICON

Silicon as the element material ensures great thermal stability and efficiency, contributing to the overall performance of the transistor.

Maximum Collector Current (IC): 12 A

A maximum collector current of 12 A indicates the ability to handle significant load currents, ideal for high-power switching applications.

Terminal Position: SINGLE

A single terminal position simplifies circuit design and reduces potential for connection errors, allowing for easier implementation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STWH13009 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

11

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STWH13009 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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