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2STL1360

STMicroelectronics

2STL1360 by STMicroelectronics

2STL1360 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.2 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,024 parts In-Stock

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4,024

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Zilex Electronics Inc.

Canada . 2,400 parts In-Stock

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2,400

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Anansix

USA . 1,583 parts In-Stock

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1,583

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Digiode

USA . 194 parts In-Stock

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194

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,315 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

$0.435

10k+ parts

-

2,315

$0.483

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$0.435

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MKK Technologies

India . 742 parts In-Stock

1+ parts

$0.908

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742

$0.908

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DigiPath Technology Company

USA . 742 parts In-Stock

1+ parts

$0.908

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742

$0.908

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AZTECH Wire

Italy . 658 parts In-Stock

1+ parts

$19.140

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658

$19.140

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Ampacity Inc.

Singapore . 1,099 parts In-Stock

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$32.050

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1,099

$32.050

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Native Components

USA . 890 parts In-Stock

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$104.360

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$100.186

890

$104.360

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$100.186

Northwest PG Solutions

USA . 480 parts In-Stock

1+ parts

$114.796

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480

$114.796

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QUARKTWIN TECHNOLOGY LTD

USA . 7,536 parts In-Stock

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7,536

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Alle Elektronik GmbH

Germany . 4,979 parts In-Stock

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4,979

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Corphita

USA . 2,490 parts In-Stock

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2,490

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Parana Technologies

USA . 1,086 parts In-Stock

1+ parts

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$0.578

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1,086

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$0.578

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Overview

Unlock the power of innovation with the 2STL1360 from STMicroelectronics, a trusted leader in semiconductor technology. This high-performance NPN transistor excels in switching applications, delivering reliability and efficiency for your projects. With its robust design and impressive temperature tolerance, you can count on the 2STL1360 to enhance your electronic circuits, ensuring peak performance and longevity. Elevate your designs with STMicroelectronics—where quality meets cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides excellent insulation and protection, making the transistor reliable in various conditions.

Polarity or Channel Type: NPN

NPN transistors are ideal for switching applications, providing fast response times and efficient operation.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making installation straightforward.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT excels in efficiently controlling power in electronic circuits.

Package Shape: ROUND

The round package shape allows for effective heat dissipation, promoting stability and longevity in performance.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and is suitable for a variety of PCBs, aiding in implementation flexibility.

No. of Terminals: 3

The three-terminal design allows for straightforward connectivity and circuit integration, simplifying the overall circuit design.

Maximum Power Dissipation (Abs): 1.2 W

With a maximum power dissipation of 1.2W, this transistor can handle significant loads, ensuring reliable performance in demanding applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style aids in effective heat management and provides versatility for diverse circuit setups.

Minimum DC Current Gain (hFE): 160

A minimum hFE of 160 indicates strong amplification capability, making this transistor suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliability in extreme environments and enhances the component's versatility.

Maximum Collector-Emitter Voltage: 60 V

This high voltage rating allows the BJT to safely operate in high-voltage applications, expanding its usability across different designs.

Transistor Element Material: SILICON

Silicon transistors are renowned for their efficiency and performance, making them a trusted choice in electronics.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3A enables the transistor to drive substantial loads, making it suitable for power switching applications.

Terminal Position: BOTTOM

Bottom terminals provide a compact footprint, allowing for efficient space utilization on the PCB.

Nominal Transition Frequency (fT): 130 MHz

A transition frequency of 130 MHz indicates the transistor's capability for high-speed operation, making it suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STL1360 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STL1360 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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