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2ST5949

STMicroelectronics

2ST5949 by STMicroelectronics

2ST5949 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,428 parts In-Stock

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2,428

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Digiode

USA . 1,336 parts In-Stock

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1,336

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Anansix

USA . 895 parts In-Stock

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895

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LittleDiode

UK . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 211 parts In-Stock

1+ parts

$0.244

100+ parts

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$0.234

211

$0.244

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$0.234

Northwest PG Solutions

USA . 216 parts In-Stock

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$0.268

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-

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$0.236

216

$0.268

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$0.236

IDEA Electronic Components Group

UK . 1,507 parts In-Stock

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$1.061

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$0.955

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1,507

$1.061

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$0.955

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MKK Technologies

India . 426 parts In-Stock

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$1.995

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426

$1.995

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DigiPath Technology Company

USA . 426 parts In-Stock

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$1.995

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426

$1.995

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Andel Nordic

Denmark . 3,630 parts In-Stock

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$7.198

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$6.910

10k+ parts

$6.910

3,630

$7.198

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$6.910

$6.910

AZTECH Wire

Italy . 1,151 parts In-Stock

1+ parts

$15.330

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1,151

$15.330

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Corphita

USA . 4,668 parts In-Stock

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4,668

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Parana Technologies

USA . 1,221 parts In-Stock

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$1.268

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$1.268

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Alle Elektronik GmbH

Germany . 1,194 parts In-Stock

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Overview

Unlock the potential of your projects with the 2ST5949 from STMicroelectronics, a powerhouse in the realm of power bipolar junction transistors. Renowned for their superior quality and reliability, STMicroelectronics ensures this NPN transistor excels in demanding switching applications. With exceptional power handling up to 250W, it guarantees seamless performance even at high temperatures. Elevate your designs and experience unmatched efficiency and durability, making the 2ST5949 an invaluable asset in any electronic endeavor!

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides excellent heat dissipation, ensuring reliable performance and longevity under high power conditions.

Polarity or Channel Type: NPN

NPN transistors are widely used in various applications, making this transistor versatile and compatible with many circuit designs.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space requirements, making it easier to integrate into various applications.

Transistor Application: SWITCHING

Perfectly suited for switching applications, this transistor can handle high-speed operations efficiently.

Package Shape: ROUND

The round package shape is often easier to handle and mount, providing flexibility in PCB design and layout.

Terminal Form: PIN/PEG

The PIN/PEG terminal form ensures secure connections, enhancing the reliability of the device in circuits.

No. of Terminals: 2

Fewer terminals reduce complexity and make this transistor easier to integrate into simple circuit designs.

Maximum Power Dissipation (Abs): 250 W

A high power dissipation capability allows this transistor to handle large amounts of power, ideal for demanding applications.

Package Style (Meter): FLANGE MOUNT

A flange mount style provides robust mounting options, improving stability in various applications.

Minimum DC Current Gain (hFE): 35

A minimum hFE of 35 ensures adequate amplification for a variety of applications, improving overall circuit performance.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enhances durability and reliability in extreme conditions.

Maximum Collector-Emitter Voltage: 250 V

Supporting high voltage operations makes it suitable for use in high-power circuits and systems.

Transistor Element Material: SILICON

Silicon transistors are known for good thermal stability and performance, making them a reliable choice in electronic devices.

Maximum Collector Current (IC): 17 A

High collector current capability enables the transistor to drive larger loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and enhances corrosion resistance for improved longevity of connections.

Terminal Position: BOTTOM

Bottom terminal positioning helps in effective heat sinking and better thermal management in circuit designs.

Case Connection: COLLECTOR

The collector connection design simplifies circuit integration and allows for straightforward wiring.

Nominal Transition Frequency (fT): 25 MHz

A nominal transition frequency of 25 MHz allows for relatively fast switching operations, suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2ST5949 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2ST5949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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