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2STN2360

STMicroelectronics

2STN2360 by STMicroelectronics

2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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9,000

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Vyrian

USA . 3,933 parts In-Stock

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3,933

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Anansix

USA . 1,292 parts In-Stock

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1,292

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Digiode

USA . 412 parts In-Stock

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412

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Inventory MP

USA . 27 parts In-Stock

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27

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Bristol Electronics

USA . 27 parts In-Stock

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27

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Distributors (Availability)

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Native Components

USA . 259 parts In-Stock

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$0.072

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-

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$0.069

259

$0.072

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$0.069

Northwest PG Solutions

USA . 422 parts In-Stock

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$0.079

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-

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$0.070

422

$0.079

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$0.070

IDEA Electronic Components Group

UK . 1,709 parts In-Stock

1+ parts

$0.720

100+ parts

-

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$0.648

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1,709

$0.720

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$0.648

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MKK Technologies

India . 635 parts In-Stock

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$1.355

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635

$1.355

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DigiPath Technology Company

USA . 635 parts In-Stock

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$1.355

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635

$1.355

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Advanced Electronics

New Zealand . 99 parts In-Stock

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$1.864

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$1.696

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$1.528

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99

$1.864

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$1.528

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AZTECH Wire

Italy . 721 parts In-Stock

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$9.870

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721

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Kepictronics

USA . 27,860 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,500 parts In-Stock

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Corphita

USA . 4,111 parts In-Stock

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Perfect Parts

USA . 3,363 parts In-Stock

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3,363

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Parana Technologies

USA . 1,849 parts In-Stock

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$0.861

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$0.861

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Alle Elektronik GmbH

Germany . 1,338 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Elevate your designs with the 2STN2360 by STMicroelectronics, a reliable PNP power transistor that excels in switching applications. Renowned for its exceptional quality and performance, STMicroelectronics ensures you benefit from a trusted manufacturer with decades of innovation. With its compact design and robust capabilities, the 2STN2360 delivers superior efficiency and durability, making it ideal for automotive, industrial, and consumer electronics. Experience unparalleled reliability and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides good mechanical protection and thermal conductivity, making the transistor resistant to environmental stresses.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into various circuits, offering better performance in certain applications like low-side switching.

Configuration: SINGLE

Single configuration optimizes space and cost effectively while ensuring reliability and ease of use.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times, making it suitable for efficient control in electronic circuits.

Surface Mount: YES

Surface mount capability ensures a compact design and facilitates automated assembly, reducing production costs and improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular packaging aids in efficient PCB layout, contributing to improved heat dissipation and performance.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and are easy to solder, enhancing manufacturing consistency.

No. of Terminals: 4

Four terminals allow for versatile connections, enhancing circuit design flexibility and making it easier to integrate into various applications.

Maximum Power Dissipation (Abs): 1.6 W

A maximum power dissipation of 1.6 W ensures that the transistor can handle moderate power levels, suitable for many general-purpose applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs, making it ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 indicates good amplification capability, suitable for various signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is capable of operating in high-temperature environments, enhancing reliability in tough conditions.

Maximum Collector-Emitter Voltage: 60 V

A maximum collector-emitter voltage of 60 V provides a wide operating range, making it suitable for a diverse set of applications.

Transistor Element Material: SILICON

Silicon as the material delivers excellent electrical characteristics and thermal stability, ensuring dependable performance.

Maximum Collector Current (IC): 3 A

The capability to handle a maximum collector current of 3 A makes it suitable for driving various loads in power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring longevity and reliable connections.

Terminal Position: DUAL

Dual terminal positioning improves layout flexibility on PCBs, allowing for more efficient designs.

Case Connection: COLLECTOR

Collector case connection ensures minimal resistance and enhances performance during high-speed switching applications.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds minimizes the risk of thermal damage, ensuring reliable performance post-soldering.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C enables compatibility with modern manufacturing processes, ensuring reliability during assembly.

Nominal Transition Frequency (fT): 130 MHz

A transition frequency of 130 MHz indicates quick switching capabilities, making it ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STN2360 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STN2360 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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