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2STN1360

STMicroelectronics

2STN1360 by STMicroelectronics

2STN1360 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 3A, and min. DC current gain of 160. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 130MHz.

Median Price

$0.276

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,066 parts In-Stock

1+ parts

$0.571

100+ parts

$0.257

1k+ parts

$0.152

10k+ parts

-

3,066

$0.571

$0.257

$0.152

-

DigiKey

USA . 501 parts In-Stock

1+ parts

$0.800

100+ parts

$0.321

1k+ parts

$0.221

10k+ parts

$0.164

501

$0.800

$0.321

$0.221

$0.164

Avnet

USA . 93,000 parts In-Stock

1+ parts

-

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93,000

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Arrow

USA . 7,000 parts In-Stock

1+ parts

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$0.146

7,000

-

-

-

$0.146

Verical

USA . 7,000 parts In-Stock

1+ parts

-

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-

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-

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$0.146

7,000

-

-

-

$0.146

Chip1Stop

Japan . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.144

10k+ parts

$0.143

4,000

-

-

$0.144

$0.143

Farnell

UK . 3,820 parts In-Stock

1+ parts

-

100+ parts

$0.276

1k+ parts

$0.158

10k+ parts

$0.142

3,820

-

$0.276

$0.158

$0.142

Element14

Singapore . 3,820 parts In-Stock

1+ parts

-

100+ parts

$0.465

1k+ parts

$0.244

10k+ parts

$0.240

3,820

-

$0.465

$0.244

$0.240

EBV Elektronik

Germany . 3,000 parts In-Stock

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-

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3,000

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Distrelec

Netherlands . 824 parts In-Stock

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824

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Distributors (In-Stock)

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Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$0.229

100+ parts

-

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22

$0.229

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-

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Digiode

USA . 3,463 parts In-Stock

1+ parts

$0.547

100+ parts

-

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3,463

$0.547

-

-

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TME

Poland . 2,680 parts In-Stock

1+ parts

$0.750

100+ parts

$0.312

1k+ parts

$0.191

10k+ parts

$0.160

2,680

$0.750

$0.312

$0.191

$0.160

Chip Stock

USA . 112,500 parts In-Stock

1+ parts

-

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112,500

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-

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IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.115

10k+ parts

$0.108

20,000

-

-

$0.115

$0.108

Vyrian

USA . 16,274 parts In-Stock

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16,274

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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6,000

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Bristol Electronics

USA . 3,738 parts In-Stock

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3,738

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VNN

France . 2,877 parts In-Stock

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2,877

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Anansix

USA . 1,972 parts In-Stock

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1,972

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Ashlea Components Ltd

UK . 1,246 parts In-Stock

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1,246

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J2 Sourcing AB

Sweden . 979 parts In-Stock

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979

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 14,312 parts In-Stock

1+ parts

$0.122

100+ parts

$0.119

1k+ parts

$0.118

10k+ parts

-

14,312

$0.122

$0.119

$0.118

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Ampacity Inc.

Singapore . 14,165 parts In-Stock

1+ parts

$0.122

100+ parts

-

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-

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14,165

$0.122

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Corohmni

South Africa . 273 parts In-Stock

1+ parts

$0.229

100+ parts

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273

$0.229

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Argo Parts USA

USA . 3,742 parts In-Stock

1+ parts

$0.229

100+ parts

-

1k+ parts

-

10k+ parts

$0.222

3,742

$0.229

-

-

$0.222

Continental Prestige Electronics

USA . 3,051 parts In-Stock

1+ parts

$0.229

100+ parts

-

1k+ parts

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10k+ parts

$0.224

3,051

$0.229

-

-

$0.224

Corphita

USA . 2,832 parts In-Stock

1+ parts

$0.518

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2,832

$0.518

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.323

100+ parts

$1.204

1k+ parts

$1.085

10k+ parts

-

450

$1.323

$1.204

$1.085

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IDEA Electronic Components Group

UK . 250 parts In-Stock

1+ parts

$1.502

100+ parts

-

1k+ parts

$1.352

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250

$1.502

-

$1.352

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MKK Technologies

India . 736 parts In-Stock

1+ parts

$2.825

100+ parts

-

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736

$2.825

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DigiPath Technology Company

USA . 736 parts In-Stock

1+ parts

$2.825

100+ parts

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736

$2.825

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GreenTree Electronics

Israel . 135,000 parts In-Stock

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135,000

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Eastek

USA . 129,000 parts In-Stock

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129,000

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Authorized Procurement Solutions

USA . 51,000 parts In-Stock

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51,000

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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A-Z Elektronik GmbH

Germany . 12,318 parts In-Stock

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12,318

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Lixinc

USA . 12,056 parts In-Stock

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12,056

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Alle Elektronik GmbH

Germany . 3,500 parts In-Stock

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3,500

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Parana Technologies

USA . 515 parts In-Stock

1+ parts

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100+ parts

$1.796

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515

-

$1.796

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Overview

Discover the superior performance and reliability of the STMicroelectronics 2STN1360 Power Bipolar Junction Transistor. With a trusted manufacturer like STMicroelectronics, you can trust in the quality and innovation behind this NPN transistor for switching applications. Its small outline package and high DC current gain offer exceptional value and efficiency for your projects. Whether you're designing consumer electronics or industrial automation systems, the 2STN1360 delivers the power and precision you need to succeed. Experience the difference with STMicroelectronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good insulation and thermal properties, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for general purpose amplification and switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and facilitating mass production.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy mounting and PCB layout.

Terminal Form: GULL WING

Gull wing terminals make soldering and connection easy and secure, improving the overall reliability of the product.

No. of Terminals: 4

Four terminals provide flexibility in circuit connections and allow for specific configurations in different applications.

Maximum Power Dissipation (Abs): 1.6 W

High maximum power dissipation ensures the transistor can handle heavy loads without overheating, improving reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact and streamlined circuit designs.

Minimum DC Current Gain (hFE): 160

High minimum DC current gain ensures stable and consistent amplification, critical for proper functioning in various circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the transistor can withstand harsh environmental conditions without degradation in performance.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating allows for use in a wide range of voltage applications, increasing versatility.

Transistor Element Material: SILICON

Silicon material provides excellent semiconductor properties, ensuring high performance and reliability in the transistor.

Maximum Collector Current (IC): 3 A

High maximum collector current rating allows the transistor to handle significant current loads, making it suitable for various high-power applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals improves soldering quality and connection reliability, enhancing the longevity of the product.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and allows for different connection options based on the application requirements.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout, making it easier to integrate the transistor into different applications.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures quick and efficient soldering process during manufacturing, saving time and cost.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder joints and ensures the durability of the transistor in extreme conditions.

Nominal Transition Frequency (fT): 130 MHz

High nominal transition frequency indicates fast switching speed and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STN1360 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STN1360 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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