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NZT651

Onsemi

NZT651 by Onsemi

NZT651 by Onsemi is a NPN BJT transistor with 4 terminals and max power dissipation of 1.2W. It operates at up to 150°C, with a max collector-emitter voltage of 60V and collector current of 4A. Ideal for switching applications, it has a transition frequency of 75MHz in a small outline package.

Median Price

$0.402

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 654 parts In-Stock

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$0.327

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$0.307

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$0.278

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654

$0.327

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$0.278

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Adafruit Industries

USA . 500 parts In-Stock

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$0.402

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$0.402

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$0.402

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500

$0.402

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$0.402

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DigiKey

USA . 1,952 parts In-Stock

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$0.890

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$0.532

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$0.378

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$0.890

$0.532

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Farnell

UK . 6,789 parts In-Stock

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$1.220

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$0.502

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$0.332

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6,789

$1.220

$0.502

$0.332

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Element14

Singapore . 7,505 parts In-Stock

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$0.389

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$0.387

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Flip Electronics (Authorized)

USA . 50 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 964 parts In-Stock

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$0.311

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Nova Conductors

Japan . 900 parts In-Stock

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$0.749

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Chip Stock

USA . 15,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,666 parts In-Stock

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Vyrian

USA . 2,606 parts In-Stock

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Tech-Mark Corp

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Carlin Systems, Inc.

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ACDS - Activité Composants Distribution Service

France . 1,699 parts In-Stock

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Electronics Depot

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Atlantic Semiconductor

USA . 1,500 parts In-Stock

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Bristol Electronics

USA . 1,262 parts In-Stock

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Anansix

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Electronic Expediters

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Resion

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LWI Electronics Inc

India . 82 parts In-Stock

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Flip Electronics

USA . 50 parts In-Stock

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Semi Source

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,706 parts In-Stock

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$0.278

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2,706

$0.278

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Corphita

USA . 829 parts In-Stock

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$0.294

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829

$0.294

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Corohmni

South Africa . 61 parts In-Stock

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$0.327

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Argo Parts USA

USA . 2,904 parts In-Stock

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$0.394

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$0.382

2,904

$0.394

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$0.382

Continental Prestige Electronics

USA . 1,688 parts In-Stock

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$0.394

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$0.386

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$0.386

Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.402

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$0.402

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$0.402

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500

$0.402

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Aztec Data Supply Inc.

USA . 4,053 parts In-Stock

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$0.428

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Andel Nordic

Denmark . 3,709 parts In-Stock

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$4.128

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$3.962

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$3.962

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$3.962

Kepictronics

USA . 306,000 parts In-Stock

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RC Electronics

USA . 74,847 parts In-Stock

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$0.360

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Perfect Parts

USA . 73,577 parts In-Stock

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Lixinc

USA . 13,556 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Kulean Microsystems

USA . 4,504 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,715 parts In-Stock

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ChipTracer

USA . 2,437 parts In-Stock

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SupplyDigital Components

Austria . 2,416 parts In-Stock

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iodParts Technologies Inc.

India . 1,733 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,699 parts In-Stock

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Glotronic Ltd.

UK . 1,359 parts In-Stock

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Assy Fe

Spain . 1,344 parts In-Stock

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Problanco Electronics

Mexico . 685 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Unleash the power of innovation with the NZT651 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Its NPN polarity and single configuration make it versatile and reliable, perfect for a wide range of electronic projects. From its high-quality construction to its robust design, the NZT651 is engineered to exceed expectations. Experience seamless functionality and efficiency with this cutting-edge transistor, delivering exceptional value and benefits to every customer. Elevate your creations with the NZT651 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and high durability, making the transistor resistant to environmental factors and ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

The switching application capability of this transistor allows for efficient on/off control of electronic signals, making it ideal for use in digital circuits and power supplies.

Maximum Power Dissipation (Abs): 1.2 W

With a high power dissipation capacity, this transistor can handle higher levels of power without overheating, ensuring reliable performance in demanding applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V allows this transistor to be used in circuits that require higher voltage handling capabilities, increasing its versatility.

Nominal Transition Frequency (fT): 75 MHz

The high transition frequency of 75 MHz indicates that this transistor can switch signals at a fast rate, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT651 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT651 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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