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NZT6728

Onsemi

NZT6728 by Onsemi

NZT6728 by Onsemi is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 20, and IC of 1.2A. With a max operating temperature of 150 °C, it is ideal for small outline packages in high-speed switching circuits.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,570 parts In-Stock

1+ parts

-

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$0.132

1k+ parts

$0.110

10k+ parts

$0.098

7,570

-

$0.132

$0.110

$0.098

Farnell

UK . 7,570 parts In-Stock

1+ parts

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$0.130

7,570

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$0.130

Verical

USA . 7,570 parts In-Stock

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$0.137

7,570

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$0.137

Distributors (In-Stock)

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Digiode

USA . 2,093 parts In-Stock

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$0.103

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2,093

$0.103

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Vyrian

USA . 819 parts In-Stock

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$0.108

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819

$0.108

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DigiKey Marketplace

USA . 7,570 parts In-Stock

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$0.110

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7,570

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$0.110

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Anansix

USA . 1,445 parts In-Stock

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1,445

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,132 parts In-Stock

1+ parts

$0.092

100+ parts

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7,132

$0.092

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Corphita

USA . 2,137 parts In-Stock

1+ parts

$0.097

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2,137

$0.097

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Corohmni

South Africa . 200 parts In-Stock

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$0.108

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200

$0.108

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Component Stockers USA

USA . 9,770 parts In-Stock

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$0.110

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$0.110

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$0.100

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-

9,770

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$0.110

$0.100

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Kepictronics

USA . 27,860 parts In-Stock

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Metaverse IC Inc.

Canada . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,883 parts In-Stock

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Continental Prestige Electronics

USA . 7,570 parts In-Stock

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$0.130

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SupplyDigital Components

Austria . 6,074 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,411 parts In-Stock

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TANS Electronics

Latvia . 3,682 parts In-Stock

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Problanco Electronics

Mexico . 3,408 parts In-Stock

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Kulean Microsystems

USA . 2,954 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Supply Digital

USA . 973 parts In-Stock

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973

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UHIMA Technologies

Türkiye . 779 parts In-Stock

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779

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Overview

Looking for a reliable and high-quality small signal BJT transistor? Look no further than the NZT6728 by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-notch products that guarantee performance and durability. The NZT6728 is perfect for switching applications, offering a low VCEsat of 0.5V and a maximum collector current of 1.2A. Its compact size and gull wing terminals make it easy to integrate into your designs. Trust Onsemi to provide you with the best in transistor technology, ensuring efficiency and reliability in all your electronic projects. Upgrade to the NZT6728 today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed for switching applications, offering reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on PCBs, saving space and making assembly more efficient.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power losses and improves efficiency.

Package Shape: RECTANGULAR

Ease of handling and placement on PCBs due to a common shape.

Terminal Form: GULL WING

Provides ease of soldering and secure terminal connections.

Maximum Power Dissipation (Abs): 1 W

Can handle relatively high power dissipation, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact size is ideal for space-constrained designs.

Maximum Power Dissipation Ambient: 1 W

Can dissipate heat effectively in different ambient conditions.

Minimum DC Current Gain (hFE): 20

Ensures stable and consistent amplification of current.

Maximum Operating Temperature: 150 °C

Can handle high operating temperatures, suitable for industrial environments.

Maximum Collector-Base Capacitance: 30 pF

Low capacitance reduces potential signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

Handles relatively high voltages, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based material offers excellent performance characteristics for transistors.

Maximum Collector Current (IC): 1.2 A

Can handle high collector currents, suitable for various applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and electrical conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections.

Case Connection: COLLECTOR

Specific case connection simplifies circuit design and layout.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency indicates good high-frequency performance for signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT6728 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-261

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

NZT6728 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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