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NZT605

Onsemi

NZT605 by Onsemi

NZT605 by Onsemi is a NPN BJT transistor with Darlington configuration. It has a max power dissipation of 1W, hFE of 300, and operates up to 150°C. Ideal for small outline applications requiring high collector current (IC) up to 1.5A and transition frequency (fT) of 150MHz.

Median Price

$0.281

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50 parts In-Stock

1+ parts

$0.180

100+ parts

$0.180

1k+ parts

$0.170

10k+ parts

-

50

$0.180

$0.180

$0.170

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Mouser Electronics

USA . 35,581 parts In-Stock

1+ parts

$0.830

100+ parts

$0.335

1k+ parts

$0.231

10k+ parts

$0.159

35,581

$0.830

$0.335

$0.231

$0.159

Newark

USA . 4,265 parts In-Stock

1+ parts

$0.855

100+ parts

$0.344

1k+ parts

$0.237

10k+ parts

-

4,265

$0.855

$0.344

$0.237

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DigiKey

USA . 13,745 parts In-Stock

1+ parts

$0.880

100+ parts

$0.354

1k+ parts

$0.244

10k+ parts

$0.176

13,745

$0.880

$0.354

$0.244

$0.176

Farnell

UK . 5,810 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.198

10k+ parts

$0.156

5,810

-

$0.281

$0.198

$0.156

Element14

Singapore . 5,810 parts In-Stock

1+ parts

-

100+ parts

$0.450

1k+ parts

$0.241

10k+ parts

$0.219

5,810

-

$0.450

$0.241

$0.219

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

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$0.175

4,000

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$0.175

Chip1Stop

Japan . 4,000 parts In-Stock

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-

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$0.160

4,000

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$0.160

Verical

USA . 4,000 parts In-Stock

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-

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$0.175

4,000

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$0.175

Distributors (In-Stock)

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Vyrian

USA . 1,109 parts In-Stock

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$0.160

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1,109

$0.160

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Digiode

USA . 1,766 parts In-Stock

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$0.172

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1,766

$0.172

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Bristol Electronics

USA . 46 parts In-Stock

1+ parts

$0.450

100+ parts

$0.180

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-

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46

$0.450

$0.180

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TME

Poland . 83 parts In-Stock

1+ parts

$0.780

100+ parts

$0.341

1k+ parts

$0.222

10k+ parts

$0.215

83

$0.780

$0.341

$0.222

$0.215

NAC Semi

USA . 128,000 parts In-Stock

1+ parts

-

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$0.375

128,000

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$0.375

ACDS - Activité Composants Distribution Service

France . 2,086 parts In-Stock

1+ parts

-

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2,086

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LIBRA Elektronik GmbH

Germany . 1,505 parts In-Stock

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1,505

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Microfarads

USA . 302 parts In-Stock

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302

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Contempo Components LLC

USA . 234 parts In-Stock

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234

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,555 parts In-Stock

1+ parts

$0.132

100+ parts

-

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11,555

$0.132

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Corohmni

South Africa . 380 parts In-Stock

1+ parts

$0.160

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380

$0.160

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Corphita

USA . 1,692 parts In-Stock

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$0.163

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1,692

$0.163

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Component Stockers USA

USA . 70 parts In-Stock

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$0.180

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70

$0.180

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Continental Prestige Electronics

USA . 3,575 parts In-Stock

1+ parts

$0.434

100+ parts

$0.278

1k+ parts

$0.161

10k+ parts

$0.148

3,575

$0.434

$0.278

$0.161

$0.148

Aztec Data Supply Inc.

USA . 40 parts In-Stock

1+ parts

$1.566

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40

$1.566

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 20,571 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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TANS Electronics

Latvia . 4,657 parts In-Stock

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4,657

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Kulean Microsystems

USA . 4,073 parts In-Stock

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4,073

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Supply Digital

USA . 2,470 parts In-Stock

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2,470

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Problanco Electronics

Mexico . 2,413 parts In-Stock

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2,413

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iodParts Technologies Inc.

India . 2,086 parts In-Stock

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2,086

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Cyclops Electronics Ltd (Excess)

UK . 2,086 parts In-Stock

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Assy Fe

Spain . 1,868 parts In-Stock

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Glotronic Ltd.

UK . 1,669 parts In-Stock

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1,669

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SupplyDigital Components

Austria . 1,355 parts In-Stock

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1,355

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Netroflash

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 140 parts In-Stock

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140

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Overview

Elevate your electronic projects with the NZT605 by Onsemi – a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor in Darlington configuration is perfect for a range of applications. With its compact package design and maximum power dissipation of 1W, the NZT605 offers customers superior value, efficiency, and versatility. Trust Onsemi's expertise and choose the NZT605 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: DARLINGTON

Darlington configuration offers high current gain and linearity, making this transistor suitable for applications requiring high amplification.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly process.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 300

The high minimum DC current gain of 300 ensures stable and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Operating temperature of 150°C allows for reliable performance in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 110 V

With a maximum collector-emitter voltage of 110 V, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material offers good conductivity and reliability, ensuring long-lasting performance of the transistor.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle higher current levels in the circuit.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150 MHz allows for fast switching and high-frequency performance in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT605 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

110 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NZT605 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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