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BC846B,235

NXP Semiconductors

BC846B,235 by NXP Semiconductors

BC846B,235 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and min hFE of 200. With a max operating temperature of 150°C, it can handle up to 0.1A collector current in a small outline package suitable for surface mount technology.

Median Price

$0.017

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25

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1k+

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Newark

USA . 20,000 parts In-Stock

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Adafruit Industries

USA . 450 parts In-Stock

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EBV Elektronik

Germany . 12,600,000 parts In-Stock

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Arrow

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Future Electronics

Canada . 160,000 parts In-Stock

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Rochester

USA . 45,066 parts In-Stock

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Verical

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Chip1Stop

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Digiode

USA . 3,542 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Sensible Micro Corp

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IBS Electronics

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NAC Semi

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SIE Connect GmbH - GreenChips

Germany . 77,036 parts In-Stock

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Chip Stock

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Greenchips

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Q Components

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Elcom Components

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LIBRA Elektronik GmbH

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Semtec, LLC

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ComSIT Distribution GmbH

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Vyrian

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Ampacity Inc.

Singapore . 2,654,643 parts In-Stock

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Semicontronic

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AZTECH Wire

Italy . 9,463 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

USA . 71 parts In-Stock

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Modulus Dynamics

Lithuania . 15,931 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,926 parts In-Stock

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GreenTree Electronics

Israel . 17,562,267 parts In-Stock

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Eastek

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RC Electronics

USA . 380,000 parts In-Stock

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Glotronic Ltd.

UK . 255,283 parts In-Stock

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Component Connect

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UNI Independent Distributors

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Authorized Procurement Solutions

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Supply Digital

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Lucentia Tech

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Netroflash

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Overview

Enhance your electronic projects with the BC846B,235 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-notch quality and reliability with their small signal bipolar junction transistors. Perfect for switching applications, this NPN transistor offers a maximum VCEsat of 0.6V and a minimum DC current gain of 200. With a compact package shape and high operating temperature, the BC846B,235 provides exceptional performance in a wide range of electronic devices. Trust NXP to bring innovation and value to your projects with this versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering reliable performance in a variety of circuits.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and implementation, making integration easier for designers.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching times and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and improving overall reliability.

Maximum VCEsat: 0.6 V

Low VCEsat value indicates minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and facilitates placement and routing during assembly.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections and enhanced mechanical strength for reliable performance in various operating conditions.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation limit, this transistor can handle heat efficiently, ensuring stable operation under heavy loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact and portable electronic devices.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable amplification and switching performance, making this transistor ideal for a wide range of applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in a variety of environments and applications.

Maximum Collector-Emitter Voltage: 65 V

With a high collector-emitter voltage rating, this transistor can withstand higher voltages, making it suitable for a wide range of voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits, making this transistor a durable and efficient choice for various applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current rating of 0.1 A, this transistor can handle moderate current loads in switching and amplification circuits.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring reliable electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and easy connection to external components, enhancing design versatility and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

30-second peak reflow time enables efficient soldering during assembly, ensuring reliable and consistent performance in the final product.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures that the transistor can withstand the soldering process without damage, ensuring high reliability in manufacturing.

Nominal Transition Frequency (fT): 100 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846B,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC846B,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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