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NZT6714

Onsemi

NZT6714 by Onsemi

NZT6714 by Onsemi is a NPN BJT transistor with 4 terminals, capable of handling up to 2A collector current and 30V collector-emitter voltage. With a min hFE of 50, it's ideal for switching applications in small outline packages. The device can operate at temperatures up to 150°C and withstand peak reflow temperatures of 260°C.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,010 parts In-Stock

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$0.011

100+ parts

$0.006

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$0.004

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1,010

$0.011

$0.006

$0.004

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Rochester

USA . 59,647 parts In-Stock

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$0.121

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$0.101

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$0.090

59,647

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$0.090

DigiKey

USA . 57,444 parts In-Stock

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$0.150

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Verical

USA . 57,444 parts In-Stock

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$0.112

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Mouser Electronics

USA . 184 parts In-Stock

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$0.089

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$0.089

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Digiode

USA . 1,131 parts In-Stock

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Vyrian

USA . 2,621 parts In-Stock

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DigiKey Marketplace

USA . 57,444 parts In-Stock

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Lantek

USA . 1,594 parts In-Stock

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Anansix

USA . 650 parts In-Stock

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650

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Corphita

USA . 3,021 parts In-Stock

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$0.010

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Corohmni

South Africa . 63 parts In-Stock

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$0.011

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63

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Andel Nordic

Denmark . 920 parts In-Stock

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$6.165

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$5.918

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$5.918

920

$6.165

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$5.918

$5.918

Metaverse IC Inc.

Canada . 136,888 parts In-Stock

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Continental Prestige Electronics

USA . 59,647 parts In-Stock

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$0.117

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Kulean Microsystems

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TANS Electronics

Latvia . 6,172 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Authorized Procurement Solutions

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Assy Fe

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GreenTree Electronics

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Supply Digital

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UHIMA Technologies

Türkiye . 497 parts In-Stock

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Overview

Discover the superior performance and reliability of the NZT6714 by Onsemi, a leading manufacturer in the industry. Ideal for switching applications, this NPN transistor offers a single configuration with a maximum collector-emitter voltage of 30V and a maximum collector current of 2A. Its small outline package design and matte tin terminal finish make it perfect for surface mount applications. Trust in the quality of Onsemi to deliver top-notch components that provide value, efficiency, and innovation to your electronic projects. Elevate your designs with the NZT6714 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies the circuit design and offers ease of integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response and efficient operation.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB integration.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and soldering on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and excellent solder joint reliability.

No. of Terminals: 4

With 4 terminals, this transistor offers versatile connectivity options in the circuit.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact designs.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent and reliable amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30 V allows for safe operation in a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high performance and reliability in circuit applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate current loads.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good electrical conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and connection options.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances performance.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can be safely soldered using standard reflow processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT6714 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NZT6714 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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