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BC847BW,115

NXP Semiconductors

BC847BW,115 by NXP Semiconductors

NXP Semiconductors' BC847BW,115 is a NPN BJT transistor with VCEsat of 0.6V and hFE of 200. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. With a compact SOT package, it offers fast transition frequency at 100MHz.

Median Price

$0.041

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42

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1k+

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DigiKey

USA . 328 parts In-Stock

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$0.130

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$0.047

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328

$0.130

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$0.020

Chip1Stop

Japan . 187 parts In-Stock

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$0.034

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Mouser Electronics

USA . 251,311 parts In-Stock

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$0.260

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$0.059

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$0.034

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251,311

$0.260

$0.059

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$0.030

Adafruit Industries

USA . 40 parts In-Stock

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$1.470

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$1.338

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$1.205

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$1.470

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Rochester

USA . 1,884,238 parts In-Stock

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Verical

USA . 1,281,988 parts In-Stock

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TTI

USA . 1,221,000 parts In-Stock

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Element14

Singapore . 462,000 parts In-Stock

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EBV Elektronik

Germany . 357,000 parts In-Stock

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Newark

USA . 342,000 parts In-Stock

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Elektronika Sales Private Limited

India . 153,000 parts In-Stock

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Future Electronics

Canada . 123,000 parts In-Stock

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Arrow

USA . 54,000 parts In-Stock

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Farnell

UK . 26,550 parts In-Stock

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RS (Exports)

UK . 5,850 parts In-Stock

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Ozdisan Elektronik

Türkiye . 2,980 parts In-Stock

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$0.013

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Digiode

USA . 4,146 parts In-Stock

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Maritex

Poland . 2 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 59,935 parts In-Stock

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Forefront Electronics and Design

USA . 100 parts In-Stock

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$0.490

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IBS Electronics

USA . 2,334,000 parts In-Stock

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NAC Semi

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Chip Stock

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Rebound Electronics

UK . 39,913 parts In-Stock

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Component Sense

UK . 34,552 parts In-Stock

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Micros

Poland . 33,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 15,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 13,255 parts In-Stock

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Partservice

France . 12,000 parts In-Stock

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Dan-Mar Components

USA . 12,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 9,000 parts In-Stock

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Vyrian

USA . 7,793 parts In-Stock

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Inventory MP

USA . 5,242 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

USA . 3,549 parts In-Stock

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DigiKey Marketplace

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Semtec, LLC

USA . 2,980 parts In-Stock

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VNN

France . 1,767 parts In-Stock

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Anansix

USA . 960 parts In-Stock

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ComSIT Distribution GmbH

Germany . 887 parts In-Stock

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ComSIT USA

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Semicontronic

India . 1,948,845 parts In-Stock

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Ampacity Inc.

Singapore . 477,796 parts In-Stock

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Corphita

USA . 1,175 parts In-Stock

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AZTECH Wire

Italy . 10,004 parts In-Stock

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Argo Parts USA

USA . 3,986 parts In-Stock

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Modulus Dynamics

Lithuania . 21,187 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Aztec Data Supply Inc.

USA . 472 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.338

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Perfect Parts

USA . 6,444,650 parts In-Stock

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Eastek

USA . 4,713,000 parts In-Stock

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Continental Prestige Electronics

USA . 501,000 parts In-Stock

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GreenTree Electronics

Israel . 465,000 parts In-Stock

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Epart123

USA . 299,925 parts In-Stock

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Glotronic Ltd.

UK . 268,480 parts In-Stock

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Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

USA . 23,146 parts In-Stock

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Robosynatics

Brazil . 12,932 parts In-Stock

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Lucentia Tech

USA . 12,932 parts In-Stock

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Authorized Procurement Solutions

USA . 11,640 parts In-Stock

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UNI Independent Distributors

Spain . 3,718 parts In-Stock

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Supply Digital

USA . 2,794 parts In-Stock

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Corohmni

South Africa . 892 parts In-Stock

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Overview

Elevate your electronic designs with the BC847BW,115 by NXP Semiconductors. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications, providing customers with reliable and efficient solutions. Manufactured with precision and expertise, this NPN transistor boasts a low VCEsat of 0.6V and a minimum DC current gain of 200, ensuring optimal functionality. Whether you're working on consumer electronics or industrial automation, the BC847BW,115 delivers exceptional value and performance that will take your projects to the next level. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material makes this transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

The NPN polarity type allows for easy integration into most circuit designs, making it a versatile choice for various applications.

Configuration: SINGLE

The single configuration simplifies circuit board layout and reduces component count, saving space and cost in the design.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor provides fast response times and efficient performance in electronic switches.

Surface Mount: YES

Being surface mountable allows for easier assembly and compact design, making it suitable for miniaturized electronic devices.

Maximum VCEsat: 0.6 V

With a low maximum VCEsat of 0.6V, this transistor offers minimal power loss and efficient operation in switching applications.

Package Shape: RECTANGULAR

The rectangular package shape is easy to handle and mount on a circuit board, ensuring a secure and stable connection.

Terminal Form: GULL WING

The gull wing terminal form provides a reliable electrical connection and ease of soldering during assembly.

No. of Terminals: 3

Having 3 terminals simplifies the connection process, reducing the risk of errors during installation.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain of 200 ensures stable and consistent amplification performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable operation.

Maximum Collector-Base Capacitance: 3 pF

The low maximum collector-base capacitance of 3pF minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage of 45V ensures safe operation in high-voltage applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent reliability and performance characteristics, making it a durable and efficient choice.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads without compromising performance.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: DUAL

The dual terminal position allows for flexible placement and orientation on the circuit board, accommodating various design requirements.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to integrate during the assembly process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and bonding of the transistor during assembly.

Reference Standard: IEC-60134

Compliant with the IEC-60134 standard, this transistor meets quality and safety requirements for electronic components.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor offers high-speed performance for RF and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BW,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847BW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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