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2N2222AUB

Microchip Technology

2N2222AUB by Microchip Technology

2N2222AUB by Microchip Technology is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/300ns) and high DC current gain (hFE=30).

Median Price

$5.262

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.388

100+ parts

$0.369

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$0.369

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450

$0.388

$0.369

$0.369

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Arrow

USA . 1,600 parts In-Stock

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$5.234

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1,600

$5.234

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DigiKey

USA . 1,122 parts In-Stock

1+ parts

$5.770

100+ parts

$5.360

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1,122

$5.770

$5.360

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Mouser Electronics

USA . 3,600 parts In-Stock

1+ parts

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$5.770

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3,600

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$5.770

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Future Electronics

Canada . 2,095 parts In-Stock

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$5.290

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$5.180

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2,095

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$5.290

$5.180

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Master Electronics

USA . 1,194 parts In-Stock

1+ parts

-

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$5.230

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$5.190

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$5.180

1,194

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$5.230

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$5.180

Verical

USA . 1,190 parts In-Stock

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1,190

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Distributors (In-Stock)

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Freelance Electronics

USA . 7 parts In-Stock

1+ parts

$3.759

100+ parts

-

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7

$3.759

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$12.250

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2

$12.250

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$31.790

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100

$31.790

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IBS Electronics

USA . 3,486 parts In-Stock

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$7.069

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3,486

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$7.069

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Electro Sonic

Canada . 1,050 parts In-Stock

1+ parts

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100+ parts

$5.650

1k+ parts

$5.130

10k+ parts

$5.060

1,050

-

$5.650

$5.130

$5.060

Vyrian

USA . 190 parts In-Stock

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190

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Semi Source

USA . 39 parts In-Stock

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39

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NexGen Digital

USA . 24 parts In-Stock

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24

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Mil-Aero Solutions, Inc.

USA . 12 parts In-Stock

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Electronics Depot

USA . 8 parts In-Stock

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8

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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4

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Holdelec - ElecDif-Pro

France . 4 parts In-Stock

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4

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LWI Electronics Inc

India . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.388

100+ parts

$0.369

1k+ parts

$0.369

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450

$0.388

$0.369

$0.369

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Aztec Data Supply Inc.

USA . 1,767 parts In-Stock

1+ parts

$1.565

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1,767

$1.565

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Corohmni

South Africa . 405 parts In-Stock

1+ parts

$1.953

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405

$1.953

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Continental Prestige Electronics

USA . 2,548 parts In-Stock

1+ parts

$6.135

100+ parts

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$6.012

2,548

$6.135

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$6.012

Modulus Dynamics

Lithuania . 40 parts In-Stock

1+ parts

$6.477

100+ parts

$6.412

1k+ parts

$6.218

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40

$6.477

$6.412

$6.218

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$31.790

100+ parts

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$30.201

10k+ parts

$29.565

1,000

$31.790

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$30.201

$29.565

Component Stockers USA

USA . 3 parts In-Stock

1+ parts

$34.970

100+ parts

$5.240

1k+ parts

$5.230

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3

$34.970

$5.240

$5.230

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Neutron USA

USA . 50 parts In-Stock

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$172.270

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50

$172.270

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QUARKTWIN TECHNOLOGY LTD

USA . 25,096 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Microchip USA

USA . 5,881 parts In-Stock

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5,881

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RGB Technical Solutions

Ukraine . 3,319 parts In-Stock

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3,319

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Argo Parts USA

USA . 949 parts In-Stock

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949

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Metaverse IC Inc.

Canada . 682 parts In-Stock

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682

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Robosynatics

Brazil . 350 parts In-Stock

1+ parts

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$3.900

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$3.900

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$3.900

350

-

$3.900

$3.900

$3.900

Lucentia Tech

USA . 350 parts In-Stock

1+ parts

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$3.900

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$3.900

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$3.900

350

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$3.900

$3.900

$3.900

Perfect Parts

USA . 138 parts In-Stock

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138

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Overview

Discover the power of the 2N2222AUB by Microchip Technology, a top-notch Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. Manufactured with utmost precision and quality, this product offers unparalleled performance and reliability. With its NPN polarity and single configuration, it provides seamless functionality. The surface mount capability and small outline package shape make it extremely versatile for various projects. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.8A, it delivers exceptional power. Whether you're a hobbyist or an industry professional, the 2N2222AUB is the ideal choice for your next project. Trust Microchip Technology for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides excellent thermal resistance, making this product suitable for high-power applications where heat dissipation is crucial.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuits and ensures compatibility with other components.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making this transistor ideal for straightforward applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and reliable switching characteristics, enhancing overall system performance.

Surface Mount: YES

The surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, allowing for space-saving designs in limited board real estate.

Terminal Form: NO LEAD

With a lead-free terminal form, this transistor complies with modern environmental regulations, making it an eco-friendly choice.

No. of Elements: 1

This transistor contains a single element, which simplifies circuit design and ensures reliable operation.

No. of Terminals: 3

With three terminals, this transistor offers versatility and ease of connection, allowing for various circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 watts, this transistor can handle moderate power levels, ensuring reliable operation under typical operating conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it compatible with various PCB designs, making it suitable for compact devices and applications with limited space.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures proper amplification and signal fidelity in low current scenarios.

Maximum Operating Temperature: 200 °C

This transistor can withstand high operating temperatures up to 200°C, allowing for reliable operation in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage rating of 50 volts, this transistor can handle high voltage applications, ensuring robust performance in various circuits.

Transistor Element Material: SILICON

The silicon material used in this transistor offers excellent electrical conductivity and reliability, making it suitable for a wide range of applications.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time of 35 nanoseconds enables quick response and high-speed switching, making it ideal for applications requiring fast switching times.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, this transistor can withstand extremely cold environments, ensuring reliable operation in extreme conditions.

Maximum Collector Current (IC): 0.8 A

The maximum collector current rating of 0.8 amperes allows this transistor to handle moderate current levels, making it suitable for a variety of applications.

Maximum Turn Off Time (toff): 300 ns

The maximum turn-off time of 300 nanoseconds ensures quick and efficient switching, contributing to enhanced system performance.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides excellent solderability and ensures reliable connections in various soldering processes.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit layout and connection options, enabling easy integration into different system designs.

Reference Standard: MIL-19500/255

Compliant with the MIL-19500/255 reference standard, this transistor meets stringent military specifications, making it suitable for demanding and high-reliability applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N2222AUB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-CDSO-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-19500/255

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N2222AUB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-533-6931, 5961015336931

NIIN

015336931

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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